IS64LF204818B-7.5TQLA3

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Memory is an essential component in a range of electronics and computing devices. IS64LF204818B-7.5TQLA3 is a type of memory device, specifically a low-density static random access memory (SRAM). In this article, we\'ll discuss the application field and working principle of the IS64LF204818B-7.5TQLA3.

The IS64LF204818B-7.5TQLA3 is a 512 Kbit SRAM that operates in a 1.8 V to 2.5 V supply range. It is designed with a standard x8 architecture and a 7.5 nsec maximum cycle time. The device is organized into eight sectors of 64 Kwords by 18 bits with a byte-write capability.

The IS64LF204818B-7.5TQLA3 is fabricated using submicron CMOS technology. It features a power-down mode, where the device can be placed into a low-power sleep mode. The device also features a write-protect pin to protect against unintentional write cycles to the memory.

The IS64LF204818B-7.5TQLA3 is suitable for a wide range of applications, including consumer electronics, automotive, telecommunications, and embedded systems. In a consumer electronic application, for example, it can be used for storing code and data for CPUs, DSPs, ASICs, and other digital devices.

The IS64LF204818B-7.5TQLA3 has a simple working principle. The device uses metal oxide semiconductor (MOS) transistors to switch individual bits, each of which is made up of one to four transistors, depending on the type of SRAM. When a write operation is initiated, a control circuit activates the write enable signal and the data and address signals. The address states which memory location is to be written to, while the data carries the information that is to be written. When the address and data signals are valid, the appropriate bit cells are activated in order to store the data.

When the device is reading from memory, the control circuit activates the address and read enable signals, which activate the appropriate memory cell. The data present at the cell is then transferred to the output, where it can be used by the system.

The IS64LF204818B-7.5TQLA3 is a state-of-the-art SRAM device suitable for a variety of application fields. Its low power consumption and high speed make it an ideal choice for a range of consumer electronics, automotive, telecommunications, and embedded systems.

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