IS64WV2568EDBLL-10BLA3 Allicdata Electronics
Allicdata Part #:

IS64WV2568EDBLL-10BLA3-ND

Manufacturer Part#:

IS64WV2568EDBLL-10BLA3

Price: $ 4.50
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC SRAM 2M PARALLEL 36MBGA
More Detail: SRAM - Asynchronous Memory IC 2Mb (256K x 8) Paral...
DataSheet: IS64WV2568EDBLL-10BLA3 datasheetIS64WV2568EDBLL-10BLA3 Datasheet/PDF
Quantity: 1000
480 +: $ 4.08687
Stock 1000Can Ship Immediately
$ 4.5
Specifications
Series: --
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 2Mb (256K x 8)
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Memory Interface: Parallel
Voltage - Supply: 2.4 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TA)
Description

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Memory is one of the core components of a computer system. Memory has many different types and categories. IS64WV2568EDBLL-10BLA3 is one of these memory chips.

IS64WV2568EDBLL-10BLA3 is an NOR flash memory chip. It provides features such as low power consumption, low access time, small shrinkage, high endurance, and high reliability. All this makes IS64WV2568EDBLL-10BLA3 a popular choice among developers. It is widely used in various types of embedded systems, such as mobile phones, gaming consoles, cameras, drones, and other digital devices.

The IS64WV2568EDBLL-10BLA3 has a voltage range of 1.8V to 3.6V and is built on an advanced floating-gate technology to achieve its storage capacity. It uses a NAND type of technology where data is stored by logic gates called transistors. It is composed of four kibit blocks that are connected together using special logic called Flash cells. It also comes with an error correction code (ECC) circuit that helps protect its data.

The working principle of IS64WV2568EDBLL-10BLA3 memory is simple. The data is written onto the chip through erase and write cycles. The first step is to erase a section of the memory by applying a high voltage which causes the stored electrons to disperse and reset the memory. In the second step, the data is written into the erased section. The stored data is secured in the memory until it is used and erased again after the operation is complete.

IS64WV2568EDBLL-10BLA3 has some key features that make it stand out from the crowd. It is ideal for applications needing faster read/write speed. It supports multiple sectors that enable data to be read in batches. It also features low-power consumption and a wide operating temperature range. These features make it suitable for small-scale applications and portable applications such as cell phones, PDAs, and digital cameras.

IS64WV2568EDBLL-10BLA3 has a large storage capacity, making it ideal for storing large amounts of data. Its high level of endurance allows data to be stored for up to one million erase-write cycles and ten million read operations. Its reliable error correction also adds more value and makes it suitable for various commercial and industrial applications.

To sum it up, IS64WV2568EDBLL-10BLA3 is a convenient and high-performance device for various types of memory applications. It offers enhanced features such as low power consumption, stable performance at different temperatures, large capacity, and error correction. Its wide application spectrum makes it an ideal option for many types of embedded systems.

The specific data is subject to PDF, and the above content is for reference

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