Allicdata Part #: | IS64WV6416BLL-15BA3-TR-ND |
Manufacturer Part#: |
IS64WV6416BLL-15BA3-TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ISSI, Integrated Silicon Solution Inc |
Short Description: | IC SRAM 1M PARALLEL 48MINIBGA |
More Detail: | SRAM - Asynchronous Memory IC 1Mb (64K x 16) Paral... |
DataSheet: | IS64WV6416BLL-15BA3-TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Asynchronous |
Memory Size: | 1Mb (64K x 16) |
Write Cycle Time - Word, Page: | 15ns |
Access Time: | 15ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.5 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 125°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 48-TFBGA |
Supplier Device Package: | 48-miniBGA (6x8) |
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The IS64WV6416BLL-15BA3-TR is a 16Mb monolithic asynchronous SRAM (Static Random Access Memory) device in a TSOPII (Thin Small Outline Package) form. It is designed for low-power applications and has a low operating current and static current. It is especially suitable for battery-powered applications and power-sensitive applications.
With an asynchronous interface, the IS64WV6416BLL-15BA3-TR offers an ideal solution for those applications where fast memories are not needed, but small device size and low power consumption are essential. The asynchronous SRAM operates with access times of 15ns and it provides an asynchronous input read/write access with a throughput rate of 200MB/s. It needs only 4 Ta (access time) to access a single location and only 7 Ta to access two successive locations.
The IS64WV6416BLL-15BA3-TR is suitable for a broad range of applications such as computer memory, communication and embedded control systems, and other applications that require quick power-up and minimal maintenance. It is optimized to use low power, while providing a high level of performance. It also offers an easy interface, with a 3V2 power supply and asynchronous operation.
The IS64WV6416BLL-15BA3-TR has a modified power-down mode. When enabled, the device enters a low current consumption mode depending on the applications specific requirement. During operation in the modified power-down mode, the output will not be written and any memory access times are equal to the cycle time. This makes it suitable for applications that require frequent access times to frequently accessed data.
The working principle of the IS64WV6416BLL-15BA3-TR involves access to the memory via the address bus. The address bus is connected to the bank address place, so that the two can communicate. To remember a particular value, the specified address is written onto the address bus. A bank will be selected, depending on the most significant bits in the address bus. The requested address will then be latched and the data will be written at the specified address.
When the memory is read, the specified address is again written onto the address bus, and the same bank selection process is done as before. The requested address is latched and the data is read from the specified address and outputted via the I/O bus. This process repeats for each request made to the memory.
The IS64WV6416BLL-15BA3-TR is an ideal memory component for applications that require low-power consumption, small component size, high speed, and reliable access to frequently used data. It can be used in a wide range of applications, from communication to embedded control systems, and its modified power-down mode makes it an ideal choice for applications that require frequent access to frequently accessed data.
The specific data is subject to PDF, and the above content is for reference
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