Allicdata Part #: | IS64C25616AL-12CTLA3-ND |
Manufacturer Part#: |
IS64C25616AL-12CTLA3 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ISSI, Integrated Silicon Solution Inc |
Short Description: | IC SRAM 4M PARALLEL 44TSOP II |
More Detail: | SRAM - Asynchronous Memory IC 4Mb (256K x 16) Para... |
DataSheet: | IS64C25616AL-12CTLA3 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Asynchronous |
Memory Size: | 4Mb (256K x 16) |
Write Cycle Time - Word, Page: | 12ns |
Access Time: | 12ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 125°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 44-TSOP (0.400", 10.16mm Width) |
Supplier Device Package: | 44-TSOP II |
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The IS64C25616AL-12CTLA3 is a DRAM component that is used in a variety of memory applications. It is a low-power, high-performance component with an on-die data bus width of 16-bit. The component features an asynchronous and registered interface, two separate address buses, and a DRAM array configuration. The component is suitable for a range of applications, including mobile computing, embedded systems, and server applications.
The IS64C25616AL-12CTLA3 utilizes a Single-Data-Rate (SDR) SDRAM architecture. In this design, the data is transferred between the memory device and the application on a single data line. This design takes advantage of the processor’s peak performance and allows for faster operation. However, since the data is transferred on a single line, the overall data throughput is relatively low.
The IS64C25616AL-12CTLA3 features an advanced burst sequence structure. This structure increases the efficiency of the device by allowing successive reads and writes of data in short bursts. Burst sequencing eliminates the need to re-read or re-write data after each individual access. This increases the overall data throughput of the device and reduces power consumption.
The IS64C25616AL-12CTLA3 also features Dynamic Refresh, which allows the device to automatically refresh its contents without any intervention from the application itself. This feature ensures that the contents of the memory remains consistent, even if the power is turned off. This feature eliminates the need for applications to manually refresh the data and thus reduces power consumption.
The IS64C25616AL-12CTLA3 utilizes Error Correction Code (ECC) for error detection. The ECC codes allow the memory device to accurately detect and correct any errors that occur during transfers of data. This provides a higher degree of reliability than traditional DRAM technology and helps ensure that data remains consistent across multiple accesses.
The IS64C25616AL-12CTLA3 is an ideal component for a range of memory applications, offering high performance in a low power package. Its advanced burst sequence and ECC capabilities provide higher levels of reliability and reduce the power consumption of the application. The component’s asynchronous and registered interface also facilitates its integration with a variety of different systems. With its features and capabilities, the IS64C25616AL-12CTLA3 is an ideal solution for mobile computing, embedded systems, and server applications.
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IS64LF204818B-7.5TQLA3-TR | ISSI, Integr... | 72.7 $ | 1000 | IC SRAM 36M PARALLEL 100L... |
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IS64LPS204818B-166TQLA3 | ISSI, Integr... | 85.41 $ | 1000 | IC SRAM 36M PARALLEL 100L... |
IS64LF102436B-7.5TQLA3 | ISSI, Integr... | 85.41 $ | 1000 | IC SRAM 36M PARALLEL 100L... |
IS64LF204818B-7.5TQLA3 | ISSI, Integr... | 85.41 $ | 1000 | IC SRAM 36M PARALLEL 100L... |
IS64WV6416BLL-15TLA3 | ISSI, Integr... | -- | 116 | IC SRAM 1M PARALLEL 44TSO... |
IS64WV25616EDBLL-10BLA3 | ISSI, Integr... | 7.12 $ | 1474 | IC SRAM 4M PARALLEL 48TFB... |
IS64LV25616AL-12TA3 | ISSI, Integr... | -- | 1000 | IC SRAM 4M PARALLEL 44TSO... |
IS64LV25616AL-12TA3-TR | ISSI, Integr... | 0.0 $ | 1000 | IC SRAM 4M PARALLEL 44TSO... |
IS64LV51216-12TLA3 | ISSI, Integr... | -- | 1000 | IC SRAM 8M PARALLEL 44TSO... |
IS64LV51216-12TLA3-TR | ISSI, Integr... | 0.0 $ | 1000 | IC SRAM 8M PARALLEL 44TSO... |
IS64WV51216BLL-10MA3 | ISSI, Integr... | 0.0 $ | 1000 | IC SRAM 8M PARALLEL 48MIN... |
IS64WV51216BLL-10MA3-TR | ISSI, Integr... | 0.0 $ | 1000 | IC SRAM 8M PARALLEL 48MIN... |
IS64LPS102436B-166B2LA3 | ISSI, Integr... | 0.0 $ | 1000 | IC SRAM 36M PARALLEL 119P... |
IS64LPS102436B-166B2LA3-TR | ISSI, Integr... | 0.0 $ | 1000 | IC SRAM 36M PARALLEL 119P... |
IS64WV102416BLL-10MA3 | ISSI, Integr... | 0.0 $ | 1000 | IC SRAM 16M PARALLEL 48TF... |
IS64WV102416BLL-10MA3-TR | ISSI, Integr... | 0.0 $ | 1000 | IC SRAM 16M PARALLEL 48TF... |
IS64WV6416BLL-15BA3 | ISSI, Integr... | -- | 1000 | IC SRAM 1M PARALLEL 48MIN... |
IS64WV6416BLL-15BA3-TR | ISSI, Integr... | 0.0 $ | 1000 | IC SRAM 1M PARALLEL 48MIN... |
IS64WV6416BLL-15TA3 | ISSI, Integr... | 0.0 $ | 1000 | IC SRAM 1M PARALLEL 44TSO... |
IS64WV6416BLL-15TA3-TR | ISSI, Integr... | 0.0 $ | 1000 | IC SRAM 1M PARALLEL 44TSO... |
IS64WV25616EDBLL-10BA3 | ISSI, Integr... | 0.0 $ | 1000 | IC SRAM 4M PARALLEL 48TFB... |
IS64WV25616EDBLL-10BA3-TR | ISSI, Integr... | 0.0 $ | 1000 | IC SRAM 4M PARALLEL 48TFB... |
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IS64WV6416BLL-15BLA3-TR | ISSI, Integr... | 2.5 $ | 1000 | IC SRAM 1M PARALLEL 48MIN... |
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IS64C25616AL-12CTLA3-TR | ISSI, Integr... | 5.7 $ | 1000 | IC SRAM 4M PARALLEL 44TSO... |
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