IS64WV6416BLL-15BLA3-TR

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IS64WV6416BLL-15BLA3-TR is a type of non-volatile synchronous static random access memory (S-SRAM) that is based on a split-gate Flash cell structure. The memory is used in a wide range of applications, such as medical, automotive, industrial and consumer electronics. In this article, we will discuss the application field and working principle of the IS64WV6416BLL-15BLA3-TR.

Application Field of IS64WV6416BLL-15BLA3-TR

Due to its low power consumption, fast access time and wide temperature range, the IS64WV6416BLL-15BLA3-TR is suitable for battery-operated and safety-critical applications with system requirements such as low-end consumer electronics, automotive, industrial and medical. The device is available in two configurations, DIP (Dual In-line Package) and SOIC (Small Outline Integrated Circuit), allowing for easy integration. The S-SRAM also has a wide operating temperature range, from -40°C to 85°C.

The device is also highly reliable, with an endurance rating of up to 10,000 cycles. The device is also designed to meet automotive grade AEC-Q100 requirements, meaning it is suitable for applications where high temperatures, shock and vibration are a concern. In addition, the device is RoHS compliant and complies with the Automotive Electronic Technology Directive (2002/95/EC).

The IS64WV6416BLL-15BLA3-TR is also suitable for industrial applications as it offers long-term data retention and low power consumption. The device is ideal for time-critical applications where space is a concern and low power consumption is critical. The device also offers industry-leading support, including online knowledge-based solutions and a customer service center.

Working Principle of IS64WV6416BLL-15BLA3-TR

The IS64WV6416BLL-15BLA3-TR is based on a split-gate Flash cell structure, allowing for non-volatile, synchronous storage and retrieval of data. The device operates at a frequency of up to 66MHz for read operations and up to 10MHz for write operations, providing fast system performance. In addition, the device offers an access time of as low as 10ns, allowing for fast access to stored data.

The device is organized as 1M x 16 words, with each word containing 16 bits of data. The data is stored in pages and blocks which can be erased and re-programmed as required. The device also has unique error-correction capabilities, allowing it to detect and correct bit errors that may occur.

The device also offers low power consumption, with a single 5V supply being used for both read and write operations. The device also includes many built-in functions to ensure optimal performance, such as write protect, block protect and status register.

Conclusion

In conclusion, the IS64WV6416BLL-15BLA3-TR is a type of non-volatile synchronous static random access memory that is suitable for a wide range of applications, from low-end consumer electronics to safety-critical automotive systems. The device is based on a split-gate Flash cell structure and offers fast access times, low power consumption and strong error-correction capabilities. Therefore, the IS64WV6416BLL-15BLA3-TR is an ideal solution for applications where space, reliability and performance are a priority.

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