Allicdata Part #: | IS64WV12816DBLL-12CTLA3-ND |
Manufacturer Part#: |
IS64WV12816DBLL-12CTLA3 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ISSI, Integrated Silicon Solution Inc |
Short Description: | IC SRAM 2M PARALLEL 44TSOP II |
More Detail: | SRAM - Asynchronous Memory IC 2Mb (128K x 16) Para... |
DataSheet: | IS64WV12816DBLL-12CTLA3 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Asynchronous |
Memory Size: | 2Mb (128K x 16) |
Write Cycle Time - Word, Page: | 12ns |
Access Time: | 12ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.4 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 125°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 44-TSOP (0.400", 10.16mm Width) |
Supplier Device Package: | 44-TSOP II |
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Memory is essential to practical computing, as it can store data, instructions, and software in a fast and efficient way. The IS64WV12816DBLL-12CTLA3 is a type of volatile, high-speed dynamic random-access memory (DRAM), used for high-performance applications. In this article, we will discuss the applications and working principle of IS64WV12816DBLL-12CTLA3.
The IS64WV12816DBLL-12CTLA3 is a 16 Megabyte Dynamic RAM, with 128K words of 16-bit each. It is designed to operate at speeds of up to 200MHz, and it has an access time of 8ns. It is composed of a 16M bit memory array, and it has a voltage range of 3.3V or 2.5V, with operations down to 1.8V.
The IS64WV12816DBLL-12CTLA3 is ideal for use in embedded applications such as microcontrollers, digital signal processors, and graphic accelerators. It is also suitable for use in applications where low power consumption and reduced data access time are important. It can be used for high-speed, high-quality graphic displays in portable computing systems, and for high-speed access to large graphics and data banks.
The working principle of the IS64WV12816DBLL-12CTLA3 is based on the conventional synchronous DRAM technology. It uses column addressing and row addressing to access the data. It has a 6X6 architecture, with 9 banks and 64K word pages in each bank. Each page is composed of 1024 bits, with 8-bits of memory per cell. The IS64WV12816DBLL-12CTLA3 has a burst rate of 4, with burst length of 8 or 16. It also has a random read cycle time of 15ns, and it is capable of transferring up to 64 bytes of data per cycle.
The IS64WV12816DBLL-12CTLA3 is an ideal memory solution for high-speed and high-performance embedded applications. It can offer high-speed access to large graphics and data banks, and it has low power consumption and reduced data access times. It also has a wide operating temperature range of -55°C to +105°C. This wide operating temperature range makes it ideal for use in applications that require reliable operation in extreme environmental conditions.
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