IS64WV51216BLL-10CTLA3-TR

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IS64WV51216BLL-10CTLA3-TR, referred to as “IS64WV51216” for short, is a 1 Gigabit (1Gbit) synchronous static random-access memory (SDRAM) produced by Integrated Silicon Solution, Inc. (ISSI). The main characteristics of IS64WV51216 are wide-bus (64 bits in 4-byte data transfers) and low power consumption.

Application Field

IS64WV51216 is used as a low-power, high- speed memory in a wide range of products. Its 512 megabit (Mbit) capacity makes it suitable for memory intensive applications such as video/graphics cards, embedded applications, as well as for general purpose applications. It is also used as disk buffering or disk caching due to its fast access times.

IS64WV51216 is also suitable for networking applications such as Ethernet and ATM switches, due to its low power consumption and wide bus. In addition, it can be used in storage application, such as RAID systems and storage-area networks. It is also used in mini PCs, webcams, and PDAs.

Working Principle

The IS64WV51216 operates on a synchronous interface. That is, the memory transfers data to and from the external memory controller at clock speed. This style of memory is called synchronous DRAM (SDRAM).

It uses a high-speed synchronous pipeline architecture. This pipeline allows multiple cycles of the system clock to be linked together. The memory uses sophisticated buffer controllers to provide a flow of data from the SDRAMs to the microprocessors. The memory is accessed by first clocking the address and followed by the data. The devices are organized into words, bytes, and pages.

The random-access memory (RAM) portion of the IS64WV51216 consists of four 64-bit banks where each can support multiple addressable locations. This memory device addressable location is referred as row and column. First, the Row and Column Address is issued to the device then followed by a single Read or Write command.

The memory is organized into pages of 512 words (×16 bits). After the Row and Column address is given, the data can be accessed in the same page without another row address. For example, when the memory is accessed using STATUS register that contains 8 bytes, there is no need to issue multiple addresses as the entire 8 byte can be read in single transaction.

The IS64WV51216 is packaged as a 66-pin TSOP (Thin Small Outline Package). However, for optimal performance it supports only two power supplies: 2.5 volts for I/O (Input/Output) and 3.3 volts for core. The device is designed to operate from a single system clock (CLK).

IS64WV51216 also has optional automatic refresh control. This feature allows a certain number of refresh cycles to occur during a refresh period. This refresh period is divided into multiple refresh cycles and each refresh cycle can execute a maximum of three refresh commands. The refresh cycles can also be configured to complete after a certain number of clock cycles. The benefit of this feature is that the refresh can be managed without degrading the system throughput.

The IS64WV51216 also supports temperature-compensated self refresh. This feature allows the device to maintain data integrity in case of temperature fluctuations and power supply fluctuations. The temperature-compensated self refresh also helps to reduce the power consumption.

The IS64WV51216 has a maximum data access time of 135 nanoseconds. The device can support up to 133MHz clock speed with a single clock cycle of 7.5 nanoseconds. At 133MHz, the maximum read data transfer rate is 267 MB/s. It is also compliant with the JEDEC SDRAM standard and offers backward compatibility with all existing SDRAMs.

The IS64WV51216 is a low-power, wide bus, synchronous memory device. It is used for memory intensive applications, as well as for general purpose applications. It is also suitable for networking applications, such as Ethernet and ATM switches, due to its low power consumption and wide bus. In addition, it can be used in storage applications, such as RAID systems and storage-area networks.

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