IS64LV25616AL-12TA3-TR

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The IS64LV25616AL-12TA3-TR is a low power, single supply, 512K CMOS Static Random Access Memory (SRAM) featuring the latest process technology. It offers the highest quality and reliability for today’s and tomorrow’s demanding application requirements. This device is accessed via 3-state inputs and 3-state outputs, in two- or four-word-wide organizations. The standard boot and reset feature assures that the memory contents are stored and remain unchanged during system power down.

The IS64LV25616AL-12TA3-TR is designed for use in a broad variety of applications. It is common in embedded applications that require high speed performance and low power consumption, such as cell phones and portable electronics. It is also found in many industrial, automotive, and aerospace applications. The wide operating temperature range of -40°C to 85°C ensures reliable operation in even the most extreme environmental conditions.

The IS64LV25616AL-12TA3-TR works on the principle of storing and retrieving data in memory. Data is stored in memory cells, which are organized into rows and columns. To access the data, a unique address is used to locate the desired memory cell. A control signal, known as the read/write (R/W) signal, is used to differentiate between a read or write operation. When a write operation is requested, a write data (WD) signal is used to supply the data to be stored in the memory cell.

The design of the IS64LV25616AL-12TA3-TR allows the user to select between two different modes of addressing. The address selection mode (ASM) selects either a two- or four-word organization, which allows for faster data access for specific applications. Additionally, the device employs write control pins to extend the life of the memory with write protection and improved margin testing.

The IS64LV25616AL-12TA3-TR incorporates an on-chip programming feature. This feature ensures data integrity and optimal performance by allowing the user to configure the memory to their application requirements. Data can be programmed through software control, or programmed during manufacturing or assembly. This allows the device to store custom data prior to its installation into the system.

The IS64LV25616AL-12TA3-TR utilizes high speed CMOS technology to provide both power savings and reliable data storage. The device has a maximum access time of 12ns and provides a maximum data transfer rate of 166MB/s. It also has a standby current of only 1μA, which helps extend the device’s battery life. The IS64LV25616AL-12TA3-TR has also been tested and is qualified for military and space applications.

The IS64LV25616AL-12TA3-TR is a high performance and reliable memory device that can provide an improved margin testing, data integrity, and power savings for a wide range of applications. It is ideal for the demanding embedded applications and equipped with the necessary features to meet those needs.

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