IS64WV6416EEBLL-10CTLA3 Allicdata Electronics
Allicdata Part #:

IS64WV6416EEBLL-10CTLA3-ND

Manufacturer Part#:

IS64WV6416EEBLL-10CTLA3

Price: $ 2.74
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC SRAM 1M PARALLEL 44TSOP II
More Detail: SRAM - Asynchronous Memory IC 1Mb (64K x 16) Paral...
DataSheet: IS64WV6416EEBLL-10CTLA3 datasheetIS64WV6416EEBLL-10CTLA3 Datasheet/PDF
Quantity: 1000
270 +: $ 2.49035
Stock 1000Can Ship Immediately
$ 2.74
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (64K x 16)
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Memory Interface: Parallel
Voltage - Supply: 2.4 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II
Description

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IS64WV6416EEBLL-10CTLA3 is a high performance Integrated Silicon Solutions Inc. (ISSI) 512K x 16 Static Random Access Memory (SRAM) module capable of supporting a data transfer rate of up to 150MHz. This module has been engineered for use in a wide range of embedded systems applications in which very low power, low noise operation, low cost and a long reliability life are required.

The IS64WV6416EEBLL-10CTLA3 SRAM module combines performance and features with low power consumption, providing a maximum active power draw of only 8.2mW. This allows it to be properly used in battery-operated equipment and other power-sensitive applications. It also features an electronics-grade reliability of greater than 1 million write cycles and over 10 years of data retention.

The IS64WV6416EEBLL-10CTLA3 SRAM module operates in a variety of bus widths and is optimized for both synchronous random access memory (SRAM) and asynchronous SRAM designs. This allows for the use of a variety of peripheral memories and logic elements as well as support for a wide range of data transfer protocols. In addition to its interface flexibility, the IS64WV6416EEBLL-10CTLA3 SRAM module also provides on-chip error correction, which can reduce system downtime and improve system reliability.

The working principle of IS64WV6416EEBLL-10CTLA3 SRAM module is based on the transistors and capacitor technology. Transistors are used as switches and capacitors are used to store the logic levels in the memory cells. These cells can be thought of as tiny amplifiers, with the transistors used to control the charging and discharging of the capacitors. When a signal is sent to a cell, the associated transistor allows or blocks charge onto or from the capacitor, respectively. This results in an increment or decrement of the voltage stored on the capacitor, changing its logic level.

The IS64WV6416EEBLL-10CTLA3 SRAM module provides for a range of application fields, such as automotive, industrial, telecommunications, test and measurement, medical, office automation, and embedded systems. This module is ideal for applications requiring performance and reliability in the face of heavy data-processing workloads. Its low power draw, minimal noise level, and wide range of supported data protocols make it an excellent choice for embedded systems, where power efficiency and noise levels are important considerations.

In summary, IS64WV6416EEBLL-10CTLA3 SRAM module is a high performance, low power consumption memory module with an excellent reliability record. Its on-chip error correction and wide range of supported data protocols make it an ideal choice for applications requiring robust data throughput in noisy and power-sensitive environments. Its ease of use, low-power consumption, and wide range of supported data protocols enable designers to prioritize performance, cost, and reliability in those areas most important for their particular application.

The specific data is subject to PDF, and the above content is for reference

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