IS64WV2568EDBLL-10CTLA3-TR Allicdata Electronics
Allicdata Part #:

IS64WV2568EDBLL-10CTLA3-TR-ND

Manufacturer Part#:

IS64WV2568EDBLL-10CTLA3-TR

Price: $ 3.44
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC SRAM 2M PARALLEL 44TSOP
More Detail: SRAM - Asynchronous Memory IC 2Mb (256K x 8) Paral...
DataSheet: IS64WV2568EDBLL-10CTLA3-TR datasheetIS64WV2568EDBLL-10CTLA3-TR Datasheet/PDF
Quantity: 1000
1000 +: $ 3.12559
Stock 1000Can Ship Immediately
$ 3.44
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 2Mb (256K x 8)
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Memory Interface: Parallel
Voltage - Supply: 2.4 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TA)
Description

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IS64WV2568EDBLL-10CTLA3-TR is a 64 megabit (8 megabyte), low voltage synchronous DRAM (SDRAM) integrated circuit produced by ISSI. It is designed for applications requiring high memory density and low power consumption. The device has a page mode of 8-bit, 4-word page and is designed to operate at 1.8V core voltage and 1.2V I/O voltage.

The SDRAM is designed with a Dual-Bank (DRC) architecture to take advantage of a partially-filled write buffer and internal pre-fetch. This configuration allows for improved write latency and higher data throughput, while the power consumption remains relatively low. The device is primarily intended for use in high-speed embedded applications, where data acquisition, communication and other time-sensitive operations are required.

IS64WV2568EDBLL-10CTLA3-TR offers a wide range of features to make it suitable for many different applications, including self-refresh, read/write burst length and programmable CAS latency settings, multiple clock settings, selectable addresses, programmable row/column sizes, and programmable data bursts. Additionally, the device supports burst-lock for improved data integrity and reliability.

The device is designed with a double data rate (DDR) architecture, which consists of two interlaced clock cycles (read and write) which are initiated from the rising and falling edges of each clock cycle. This configuration allows the memory to be accessed twice as fast as a standard SDRAM. For improved write latency, the device features Auto Precharge2 and Bank Interleave, which can boost memory access performance by up to 30%.

IS64WV2568EDBLL-10CTLA3-TR is an ideal device for a wide range of applications, including network interface cards (NICs), digital video and audio, routers, switches and wireless access points. Additionally, the device offers an extremely low power consumption rating of only 2.8V, making it well-suited to many battery-powered applications.

The device is capable of performing read and write operations simultaneously, further enhancing the performance of data-intensive applications. Additionally, the device can operate in a temperature range of -40°C to 85°C, making it well suited for many industrial applications.

Overall, IS64WV2568EDBLL-10CTLA3-TR offers a 78-ball package and has a non-volatile memory refresh setting of 4096 refresh cycles per 32ms, allowing it to deliver superior performance and reliability with minimal power consumption. The device is ideal for a wide range of applications, particularly those that require large amounts of memory density and low power usage.

The specific data is subject to PDF, and the above content is for reference

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