ISL89411IBZ-T13 Allicdata Electronics
Allicdata Part #:

ISL89411IBZ-T13-ND

Manufacturer Part#:

ISL89411IBZ-T13

Price: $ 0.76
Product Category:

Integrated Circuits (ICs)

Manufacturer: Intersil
Short Description: IC DRVR MOSFET DUAL-CH 8-SOIC
More Detail: Low-Side Gate Driver IC Inverting 8-SOIC
DataSheet: ISL89411IBZ-T13 datasheetISL89411IBZ-T13 Datasheet/PDF
Quantity: 1000
2500 +: $ 0.68891
Stock 1000Can Ship Immediately
$ 0.76
Specifications
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Base Part Number: ISL89411
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Rise / Fall Time (Typ): 7.5ns, 10ns
Input Type: Inverting
Current - Peak Output (Source, Sink): 2A, 2A
Series: --
Voltage - Supply: 4.5 V ~ 18 V
Gate Type: N-Channel, P-Channel MOSFET
Number of Drivers: 2
Channel Type: Independent
Driven Configuration: Low-Side
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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ISL89411IBZ-T13 Application Field and Working Principle

The ISL89411IBZ-T13 is a dual-channel high-side buck gate driver IC that supports a wide range of input and output voltages from 2.7V to 28V, making it highly suitable for industrial applications. It also offers high levels of integration and is compatible with most mainstream single processor and multicore processors. The device is designed to be used in applications requiring low EMI and low power consumption. It is also suitable for applications that require high current output switching and fast transient response.

The ISL89411IBZ-T13 supports both high side and low side operation of the buck driver so it can be used for both buck regulators and for high side regulation. It uses a dual channel high side un-clip technology to improve noise performance. The device also integrates a slew rate control circuit which allows the switching frequency to be adjusted in order to maximize the efficiency and reduce EMI.

The operating principle of the device is based on the use of high-side and low-side MOSFETs. When the gate of one of the MOSFETs is triggered, the device switches on the high-side driving voltage to charge the drain of the first MOSFET. The current stored in the gate capacitance is then used to drive the gate of the second MOSFET, which completes the switching process. This process is used to control the current through the load.

The ISL89411IBZ-T13 has a high slew rate control, allowing it to achieve high switching frequency up to 4MHz, which is suitable for high-efficiency power application. It also features current limiting, short-circuit protection, over-voltage protection and thermal shutdown. The device comes in DFN and QFN packages, allowing for compact board designs.

The ISL89411IBZ-T13 is a great option for applications requiring both high current output and low EMI. It is well suited for industrial applications, where the current output is high and EMI levels are critical. The high-side and low-side MOSFETs make the device suitable for both buck regulators and high side regulation. The high slew rate control, current limiting, short-circuit protection and over voltage protection make the device an ideal solution for most applications.

The specific data is subject to PDF, and the above content is for reference

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