ISL9V2040S3ST

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Intelligent power switches (IPS) are electronic switches or transistorized relays that control the power distribution in an electric circuit. They allow automatic control of energy, eliminate the need for manual switching, and provide advanced protection for all the components in an electric system. ISL9V2040S3ST is a Smart FET (field effect transistor) IPS device built with N-channel MOSFETs for power switching. This device belongs to the family of IGBT transistors — single.

ISL9V2040S3ST application field and working principle

ISL9V2040S3ST is a compact IPS solution with a small package and low forward voltage drop. This device is specifically designed for applications such as motor drivers and driver assistance systems :

• brushless DC motor (BLDC) control
• 12V automotive lighting applications
• active start-stop systems
• 48V battery systems
• electrified power trains
• universal motors

The output of the ISL9V2040S3ST is based on N-channel MOSFETs (nFETs), which are wide bandgap semiconductor materials of different doping concentrations. It has superior performance characteristics, including low forward voltage drop, fast switching performance, low temperature sensitivity, and low power losses. This allows it to provide higher efficiency and higher reliability in power control applications.

Moreover, the low input capacitance and low gate-source voltage of the nFET make it ideal for applications such as motor drivers where frequency response is crucial. This device operates within a wide temperature range and is designed with a variety of protection features, such as built-in current and voltage limiters, over-voltage protection, under-voltage lock out (UVLO), and overtemperature warnings.

The working principle of the ISL9V2040S3ST is simplified in the following steps:

1. Charging of internal capacitor
2. Source current detection
3. Lower FET control
4. Current detection via resistors
5. Gate voltage control
6. U-POL voltage control

The internal capacitor of the ISL9V2040S3ST is charged and held until the lower FET of the device is activated. The source current is then detected via two resistors located between gate, source, and drain. The gate voltage is then controlled and adjusted, as well as the U-POL voltage, which is responsible for the control of on/off switching of the FET. Once the voltage reaches the pre-set level, the lower FET is turned on. The gate voltage then increases and the current flowing through the device is limited.

The ISL9V2040S3ST is an efficient and reliable IPS solution that is well-suited for multiple applications. It provides superior performance with a small package, low forward voltage drop, wide temperature range, and advanced protection features. The device is also easy to integrate and provides high efficiency, making it an ideal choice for a variety of power control applications.

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