Allicdata Part #: | IX6R11M6-ND |
Manufacturer Part#: |
IX6R11M6 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | IXYS |
Short Description: | IC DRVR HALF BRIDGE 4A 16-MLP |
More Detail: | Half-Bridge Gate Driver IC Non-Inverting 16-MLP (7... |
DataSheet: | IX6R11M6 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Current - Peak Output (Source, Sink): | -- |
Base Part Number: | IX6*11 |
Supplier Device Package: | 16-MLP (7x6) |
Package / Case: | 16-VDFN Exposed Pad |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 125°C (TA) |
Rise / Fall Time (Typ): | 25ns, 17ns |
High Side Voltage - Max (Bootstrap): | 600V |
Input Type: | Non-Inverting |
Series: | -- |
Logic Voltage - VIL, VIH: | 6V, 9.5V |
Voltage - Supply: | 10 V ~ 35 V |
Gate Type: | IGBT, N-Channel MOSFET |
Number of Drivers: | 2 |
Channel Type: | Independent |
Driven Configuration: | Half-Bridge |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The IX6R11M6 device is a gate driver PMIC (power management integrated circuit), which is designed for switching applications such as DC-to-DC converters, Uninterruptible Power Supplies (UPS\'s) and motor drivers. It features a high-side and low-side gate driver output with 4A peak current and 5.5V voltage rating. It also supports a wide supply voltage range from 2.7V to 27V.
The IX6R11M6 gate driver operates by providing a high-side gate drive voltage, which is generated using an integrated charge pump and regulated floating gate driver output. The low-side gate drive voltage is generated using an integrated low-side MOSFET which is controlled by the high-side gate drive voltage. As the voltage across the drain and the source of the high-side MOSFET increases, the IX6R11M6 increases the gate drive voltage to high-side MOSFET drain and causes the low-side MOSFET to be turned off.
The IX6R11M6 is designed to operate from an input voltage range of 3V to 36V and is designed to provide a high-side gate drive voltage ranges up to 17V. The device also features programmable undervoltage lockout and overvoltage fault protection, which helps to keep the output voltage within a safe operating range.
The IX6R11M6 is designed to control MOS-FETs and IGBTs for power control applications. It operates by generating a high-side and low-side gate drive signals which are then used to turn the MOSFETs and IGBTs on or off. The output of the device can be programmed with an external resistor divider network, so that the voltage level of the gate drive signal can be accurately set. The device also supports an enable pin that can be used to turn the device on or off by logic levels.
In addition to its gate drive capabilities, the IX6R11M6 also has an integrated internal current limit of 1A. This feature helps to ensure that the device is protected from possible short-circuit conditions. The device also features an overvoltage fault protection and an undervoltage lockout function, which helps to protect the device from overvoltage and undervoltage conditions.
The IX6R11M6 is designed for switching applications such as DC-to-DC converters, Motor Drives, Uninterruptible Power Supplies (UPS’s) and other power control applications. The device is designed to support a wide input voltage range, a high-side and low-side gate driver output, and an internal current limit of 1A. In addition, the device also has integrated overvoltage fault protection, undervoltage lockout, and a enable pin for logic level control.
The specific data is subject to PDF, and the above content is for reference
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