IX6R11M6T/R

Current - Peak Output (Source, Sink):	--
Base Part Number:	IX6*11
Supplier Device Package:	16-MLP (7x6)
Package / Case:	16-VDFN Exposed Pad
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 125°C (TA)
Rise / Fall Time (Typ):	25ns, 17ns
High Side Voltage - Max (Bootstrap):	600V
Input Type:	Non-Inverting
Series:	--
Logic Voltage - VIL, VIH:	6V, 9.5V
Voltage - Supply:	10 V ~ 35 V
Gate Type:	IGBT, N-Channel MOSFET
Number of Drivers:	2
Channel Type:	Independent
Driven Configuration:	Half-Bridge
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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Introduction

The IX6R11M6T/R is a high-performance 3rd generation advanced power MOSFET family Integrated Circuit (IC) designed to provide dynamic driving of gate signals to switching semiconductor devices such as MOSFETs, IGBTs, or transistors. It belongs to a class of Power Management integrated circuits (PMIC) known as Gate Drivers.Gate drivers translate high-level digital/logic signals into a low-level gate signal that can drive external switch devices. The IX6R11M6T/R provides gate drive current from 1200mA up to 2.5A and features low dropout voltage to reduce power dissipation. It also includes configurable features for protection against short circuit conditions and for enhanced system level protection.

Application Field

The IX6R11M6T/Rgate driver has several different application fields. Its design enables it to be used in wide variety of applications including motor controllers, low-voltage conversion, solar systems and grid interconnects, power factor correction (PFC) applications, white goods, industrial machines, and medical equipment.In motor controllers, the IX6R11M6T/R provides gate drive current for powering frequency converters, AC speed controllers, and three-phase inverters for brushless DC motors. The IX6R11M6T/R helps improve the efficiency and reliability of motor controllers by efficiently transferring high-level switch signals to MOSFETs with low capacitance.In solar systems and grid interconnects, the IX6R11M6T/R gate driver helps reduce power dissipation in power electronics through low-dropout voltage and high maximum operating temperature. The IC also provides protection against fault conditions caused by blocked or open MOSFET switches.The IX6R11M6T/R also has applications in PFC applications such as power adapters, lighting products, and unprotected low-voltage power supplies. The IC helps reduce power dissipation and maintain accuracy by transferring high-level switch signals to MOSFETs with low capacitance.The IX6R11M6T/R can also be used in white goods, industrial machines and medical equipment. The IC helps increase reliability and reduce power dissipation with its low-dropout voltage, high maximum operating temperature and configurable features for protection against short circuit conditions.

Working Principle

The IX6R11M6T/R IC utilizes an advanced switching control architecture to provide fast, accurate, and reliable gate drive signals to the switch device. This architecture consists of an internal three-phase gate driver, an amplifier, and regulated power stages.The internal gate driver consists of high side and low side MOSFETs implemented in a full bridge topology, providing an efficient and reliable high-speed drive for the external switch devices. The amplifier section converts high-level digital/logic signals into low-level gate signals that can drive the external switch devices. Finally, the regulated power stages provide clean power and current to the gate drivers and the load.

Conclusion

The IX6R11M6T/R is a high-performance 3rd generation advanced power MOSFET family IC. It belongs to the class of PMIC known as Gate Drivers, and it can be used in wide variety of applications such as motor controllers, low-voltage power conversion, solar systems, grid interconnects, PFC applications, white goods, industrial machines, and medical equipment. The IX6R11M6T/R utilizes an advanced switching control architecture to provide fast, accurate, and reliable gate drive signals to the switch devices using high side and low side MOSFETs, an amplifier, and regulated power stages.

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