IXA20I1200PB Discrete Semiconductor Products |
|
Allicdata Part #: | IXA20I1200PB-ND |
Manufacturer Part#: |
IXA20I1200PB |
Price: | $ 2.88 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | IGBT 1200V 33A 130W TO220 |
More Detail: | IGBT PT 1200V 38A 165W Through Hole TO-220AB |
DataSheet: | IXA20I1200PB Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
50 +: | $ 2.61954 |
Series: | -- |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | PT |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 38A |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 15A |
Power - Max: | 165W |
Switching Energy: | 1.65mJ (on), 1.7mJ (off) |
Input Type: | Standard |
Gate Charge: | 47nC |
Td (on/off) @ 25°C: | -- |
Test Condition: | 600V, 15A, 56 Ohm, 15V |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
IXA20I1200PB Application Field and Working Principle
IXA20I1200PB is a type of IGBTs (Insulated Gate Bipolar Transistors), which falls into the category of single. IGBTs are a type of transistor that combines the bipolar junction transistor and MOSFET (Metal-Oxide Field-Effect Transistor) elements together to form a very efficient power switch. Though they possess an advantage of high current handling capability, they are also very sensitive to high temperature and short circuit. Thus, it is important to understand their particular application field and working principle to bring out their best performance.
Application Field
IXA20I1200PB can offer superior performance in wide-ranging applications, from controlling large industrial motors to powering high-current LCDs. They are typically used for medium-voltage drives, variable speed drives, solar inverters, traction applications, machine tools, and automotive engine/motor control. Their low switching losses make them suitable for applications that require high repetition speed and high frequency. They also provide excellent surge capability even when subjected to extreme environmental conditions. IXA20I1200PB can be operated at temperature range from -40 degree Celsius to 150 degree Celsius, able to exhibit very good thermal properties even under the toughest conditions.
Working Principle
The general working principle of an IGBT is to use the bipolar gate transistor to control the current passing between the collector and drain. In an IGBT, the traditional gate terminal has been replaced by an insulated gate terminal, in other words, a Metal-Oxide Field-Effect Transistor (MOSFET) is used. This is why IGBTs have all the advantages of MOSFETs, including low on-state voltage, fast switching speed, and accurate control. Additionally, the bipolar junction transistor provides more current gain than the MOSFET, allowing less gate drive requirements, allowing for a wide variety of applications.
At the start of cycle, the collector to gate voltage is positive, making the gate to emitters\' voltage positive and turning the IGBT off. However, once the positive voltage is removed, the negative voltage pulls the gate towards the turns the IGBT on. From then on, the current flows from the collector to the drain, and the IGBT remains in the conducting state until the voltage is again reversed.
Because of their superior noise immunity and their low on-state voltage drop, IGBTs are well-suited to many high-power applications. The IXA20I1200PB in particular is designed specifically to minimize switching-loss while providing superior reliability under harsh environment.
Conclusion
The IXA20I1200PB is a great choice for a wide range of applications, from controlling large industrial motors to powering high-current LCDs. With its superior current handling capability, noise immunity and low-on state voltage drop, it is well-suited for those applications that require high repetition speed and high-frequency operations. With a temperature range of -40 to 150 degree Celsius, it can provide excellent performance even in extreme conditions. By understanding the application field and working principle of IXA20I1200PB, it is possible to bring out the best performance from this device.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
IXA20I1200PB | IXYS | 2.88 $ | 1000 | IGBT 1200V 33A 130W TO220... |
IXA20IF1200HB | IXYS | 4.12 $ | 1000 | IGBT 1200V 38A 165W TO247... |
IXA20RG1200DHGLB-TRR | IXYS | 6.59 $ | 1000 | IGBT 1200V 32A 125W SMPDI... |
IXA20RG1200DHGLB | IXYS | 7.18 $ | 1000 | IGBT 1200V 32A 125W SMPDI... |
IXA220I650NA | IXYS | 23.44 $ | 1000 | IGBT MODULE 650V SOT227IG... |
IXA20PG1200DHGLB-TRR | IXYS | 8.18 $ | 1000 | IGBT MODULE 1200V 105A SM... |
IXA20PG1200DHGLB | IXYS | 8.9 $ | 1000 | IGBT MODULE 1200V 105A SM... |
IXA27IF1200HJ | IXYS | 5.2 $ | 1000 | IGBT MODULE 1200V ISOPLUS... |
IGBT 1200V 9.6A 62.5W TO247-3IGBT 1200V...
IGBT 1200V TO247-3IGBT
IGBT 1200V TO247-3IGBT 1200V 57A 200W T...
IGBT 600V TO-247 COPAKIGBT
INTEGRATED CIRCUITIGBT 600V 6A 40W Surf...
POWER MOSFET TO-3IGBT