Allicdata Part #: | IXA20IF1200HB-ND |
Manufacturer Part#: |
IXA20IF1200HB |
Price: | $ 4.12 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | IGBT 1200V 38A 165W TO247 |
More Detail: | IGBT PT 1200V 38A 165W Through Hole TO-247AD (HB) |
DataSheet: | IXA20IF1200HB Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
30 +: | $ 3.74283 |
Series: | -- |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | PT |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 38A |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 15A |
Power - Max: | 165W |
Switching Energy: | 1.55mJ (on), 1.7mJ (off) |
Input Type: | Standard |
Gate Charge: | 47nC |
Td (on/off) @ 25°C: | -- |
Test Condition: | 600V, 15A, 56 Ohm, 15V |
Reverse Recovery Time (trr): | 350ns |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247AD (HB) |
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The IXA20IF1200HB is a transistor device that is typically classified as a single IGBT. IGBT stands for Insulated Gate Bipolar Transistor and these devices involve the combination of a thyristor and a MOSFET. This type of device is especially advantageous because it is able to offer both the fast switching speeds of MOSFETs and the high current and low saturation voltage of a thyristor.
IGBTs are commonly used in many different applications and the IXA20IF1200HB is no exception. This particular device can be used in a number of different applications including motor control, solar power conversion, welding and uninterruptible power supplies. It is also used in renewable energy inverters, DC-DC converters, motor drives and industrial applications that require high switching frequency.
The IXA20IF1200HB transistor works by utilizing a metal oxide semiconductor field effect transistor, or MOSFET, to control the flow of current. This is done by allowing a small amount of current to pass through the device, which then generates a voltage that can be used to create an insulated gate in the device. By controlling the voltage of the gate, the flow of current can be controlled, allowing for precise switching of the device.
The IXA20IF1200HB transistor also features a low on-state resistance and a high current capacity. This allows it to handle higher currents without the need for large power dissipation or high voltage levels. In addition, the device also features a fast switching capability, which enables it to switch on and off quickly without causing too much power loss. As a result, the IXA20IF1200HB offers excellent performance in applications requiring high power and fast switching speeds.
In conclusion, the IXA20IF1200HB is a single IGBT transistor device. It is designed for use in motor control, solar power conversion, welding and uninterruptible power supplies and offers excellent performance in these applications. It is also well-suited for high-frequency switching applications due to its low on-state resistance and high current capacity. In addition, its fast switching speeds reduce the power loss associated with switching due to its efficient operation. As such, the IXA20IF1200HB is an ideal choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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