IXA20RG1200DHGLB Allicdata Electronics
Allicdata Part #:

IXA20RG1200DHGLB-ND

Manufacturer Part#:

IXA20RG1200DHGLB

Price: $ 7.18
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 1200V 32A 125W SMPD
More Detail: IGBT PT 1200V 32A 125W Surface Mount ISOPLUS-SMPD™...
DataSheet: IXA20RG1200DHGLB datasheetIXA20RG1200DHGLB Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
45 +: $ 6.52680
Stock 1000Can Ship Immediately
$ 7.18
Specifications
Series: --
Packaging: Tray 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 32A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Power - Max: 125W
Switching Energy: 1.55mJ (on), 1.7mJ (off)
Input Type: Standard
Gate Charge: 48nC
Td (on/off) @ 25°C: --
Test Condition: 600V, 15A, 56 Ohm, 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 9-SMD Module
Supplier Device Package: ISOPLUS-SMPD™.B
Description

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The IXA20RG1200DHGLB is a type of insulated gate bipolar transistor (IGBT) known as a single. This device is produced by IXYS Integrated Circuits Division and is utilized in several different industries, such as automotive, factory automation, home appliances, renewable energy, and motor control. While it may appear to be a complex device, an examination of its application field and working principle reveals a relatively straightforward design.

An IXA20RG1200DHGLB is, essentially, a combination of an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) and a bipolar transistor functioning as a switch. Its design combines the best of both reactors - the efficiency and fast switching speeds of the MOSFET and the low-saturation voltage and high current ratings of the bipolar. By combining these two transistor technologies into one package, the IXA20RG1200DHGLB avoids the problems associated with the use of each in isolation, such as thermal runaway and cross-conduction.

The IXA20RG1200DHGLB is designed for power switching applications, with a maximum rated collector-emitter voltage of 1200V and a maximum collector current of 20A. It is capable of operating at up to 175°C, making it suitable for many high-duty applications. It has a fast switching speed and low emissions, making it suitable for use in noise-sensitive environments such as hospitals and laboratories. It also features a high insulation system, with an insulation resistance greater than 10,000 megaohms and a dielectric strength greater than 2,800V. This makes it ideal for use in a wide variety of high voltage and critical applications.

The working principle of the IXA20RG1200DHGLB is relatively straightforward. When the gate is activated, electrons that would otherwise be trapped in the “off” state are released, causing current to flow through the device. This is known as the “on-state”. When the gate is deactivated, the electrons return to their original state, disrupting the flow of current and switching the device back to its “off-state”. This cycle of on- and off-states is repeated until the desired output is achieved.

The IXA20RG1200DHGLB is a versatile device, suitable for use in a wide variety of environments and applications. Its fast switching speed and low emissions make it particularly suitable for noise-sensitive environments, while its high insulation system and high current ratings make it suitable for use in high voltage and critical applications. Its low cost and versatility make it a popular choice in many industries, such as automotive, factory automation, home appliances, renewable energy, and motor control.

The specific data is subject to PDF, and the above content is for reference

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