IXA220I650NA

IXA220I650NA Application Field and Working Principle

IXA220I650NA technology is making waves in the field of industrial control that has traditionally been fulfilled by the use of thyristors and other higher power rated devices. The IXA220I650NA is a Bit +/ Control Logic IGBT module (Insulated Gate Bipolar Transistor) that offers high-power solutions for a range of industrial solutions, making it a reliable choice for today\'s high-power applications. It is ideal for fast DC voltage and AC control of large motors, transformers, and heaters, as well as variable speed drives and solar inverters.

The IXA220I650NA is a complete, 1.2kV, 2200A module with a 650A base current rating. The module includes a dual IGBT chip, two Ultra Fast diodes and a dynamic snubber circuit. The dynamic snubber circuit stabilizes AC and DC operations. The package size is mini, reducing the space and complexity for motor control applications. The 8 lead module is suitable for automated assembly, ensuring reliable operation and higher process yield when compared to manual assembly. The dual chip design reduces half cycle losses and increases the overall module efficiency.

The IXA220I650NA combines two IGBT chips with a unique high efficiency, low inductance press-pack package. The semiconductor and passive components are laid out in an 8 lead package, with two pins (Vcc1 and Vcc2) tied to a high voltage capacitor. Two Ultra Fast diodes are included in the package which also allows for protected gate drive. This gate drive circuit improves the device switching performance giving up to 30% lower switching losses when compared to other IGBT modules of the same power rating.

The IXA220I650NA is designed to combine both IGBT and Voltage Control Logic, allowing complete, high quality control of large motors and other electrical systems. The module offers the advantages of low-contact power semiconductor with high-power IGBT and low-impedance anti-parallel diodes. It is suitable for fast switching in motor, transformer and heater control, as well as for variable speed drives. The package design of the IXA220I650NA also provides improved connection and easier thermal geometry for motor control.

Working principle of the IXA220I650NA is based on the action of electrons in the base region, of an NPN bipolar transistor (BJT). In a polarized BJT, the current in the base is controlled by a gate signal. If a positive potential is applied to the base, current can flow through the base and the transistor is said to be in the conductive, or on, state. If a negative potential is applied to the base, no current flows and the transistor is in the off, or non-conductive, state.

Insulated Gate Bipolar Transistor or IGBT is basically a combination of an isolated gate field-effect transistor and a bipolar junction transistor, in which a single gate electrode is connected to both the BJT’s base and to the FET’s gate. This transistor is used in switching applications, for inductive loads. The IXA220I650NA also features built in voltage control logic, allowing for more accurate control of the IGBTs.

In conclusion, the IXA220I650NA is a reliable, high-power solution for a wide range of industrial applications. Its press-pack package enables efficient operation, low switching losses and reduced circuit complexity making it the ideal choice for motor control and other high-power applications. This module also features built in voltage control logic, allowing for more precise control of the IGBTs. It is suitable for fast switching in motor, transformer, and heater control, as well as for variable speed drives.