IXDD614SI

Series:	--
Packaging:	Tube
Part Status:	Active
Driven Configuration:	Low-Side
Channel Type:	Single
Number of Drivers:	1
Gate Type:	IGBT, N-Channel, P-Channel MOSFET
Voltage - Supply:	4.5 V ~ 35 V
Logic Voltage - VIL, VIH:	0.8V, 3V
Current - Peak Output (Source, Sink):	14A, 14A
Input Type:	Non-Inverting
Rise / Fall Time (Typ):	25ns, 18ns
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package:	8-SOIC-EP

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Introduction

IXDD614SI is a high-performance gate driver designed for use in power management and power system applications. It provides high performance for a wide range of use cases, including switched mode power supplies (SMPS), power factor correction (PFC), and power rectifiers. It is capable of driving and controlling N-channel MOSFETs and IGBTs in single, half-bridge, and full-bridge configurations, making it an ideal solution for many common switching applications. Its features include an integrated drive voltage, an adjustable slew rate, and an external voltage reference, as well as other features designed for high efficiency and flexibility.

Application Fields

IXDD614SI is suited for a variety of applications, such as SMPS, power factor correction, power rectifiers, motor control, and UPS systems. With its high operating frequency and low RDSon, it is suitable for a wide range of voltage and current requirements found in these applications. The IXDD614SI also has an integrated bootstrap diode and external voltage reference, providing further flexibility for various operating applications.

Working Principle

IXDD614SI is designed with a high-speed drive circuit, compatible with a wide range of N-channel MOSFETs and IGBTs. It is capable of driving large gate capacitances up to 10nF, providing fast switch on/off time, and low switching losses.With its adjustable slew rate, adjustment of the switching speed is possible depending on the application. By using an external voltage reference, a wide range of output voltages can be created, allowing for compatibility with a variety of gate drives. The bootstrap diode allows for improved efficiency and reliability in operations requiring high voltage driving, while the integrated gate drive ensures a steady output.

Advantages of IXDD614SI

IXDD614SI offers a wide range of advantages for power management and power system applications. It is able to drive up to 10nF gate capacitances, providing fast switching and high efficiency. Its adjustable slew rate allows for easy adjustment of switching speed based on application needs, while its external voltage reference enables compatibility with a variety of gate drives. Additionally, the bootstrap diode improves efficiency and reliability for operation with high voltage driving requirements.

Conclusion

IXDD614SI is a high-performance gate driver designed for use in power management and power system applications. It is well suited for a variety of applications, such as SMPS, power factor correction, power rectifiers, motor control, and UPS systems. With its high operating frequency, low RDSon, adjustable slew rate, and external voltage reference, it is capable of providing high performance in many different applications. Additionally, its integrated bootstrap diode and external voltage reference provide further flexibility for various operating applications.

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