IXDD609SIATR Allicdata Electronics
Allicdata Part #:

IXDD609SIATR-ND

Manufacturer Part#:

IXDD609SIATR

Price: $ 0.53
Product Category:

Integrated Circuits (ICs)

Manufacturer: IXYS Integrated Circuits Division
Short Description: IC GATE DVR 9A NON-INV 8-SOIC
More Detail: Low-Side Gate Driver IC Non-Inverting 8-SOIC
DataSheet: IXDD609SIATR datasheetIXDD609SIATR Datasheet/PDF
Quantity: 1000
2000 +: $ 0.47628
Stock 1000Can Ship Immediately
$ 0.53
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Driven Configuration: Low-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Voltage - Supply: 4.5 V ~ 35 V
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 9A, 9A
Input Type: Non-Inverting
Rise / Fall Time (Typ): 22ns, 15ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Description

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Integrated power module IXDD609SIATR is a high-performance power management integrated circuit (PMIC) and gate driver. It is specifically designed to provide an efficient and cost-effective solution for controlling and managing power in next generation power management applications. Its application field covers power management, automotive, industrial, audio, and battery management.

Overview

The IXDD609SIATR integrated power module offers a complete power supply solution that combines both high-performance DC/DC conversion with a high-performance gate driver in a single package. It features an integrated driver circuit that is capable of driving a MOSFET or IGBT over a wide range of power levels. The IXDD609SIATR is designed to accurately control the turn-on and turn-off timing of MOSFETS and IGBTs while providing stable and precise operation with minimal stress to the device.

Working Principle

The IXDD609SIATR integrated power module operates by providing a constant level of current through its integrated low-side gate driver section. The on-board gate driver is able to provide this constant current over a wide range of operating conditions. This ensures that the switching behavior of the MOSFET or IGBT is always under control. The integrated power module also incorporates a precise and accurate switching frequency selection. This ensures that the switching frequency of the device is optimized for the power requirements of the system.

Features

The IXDD609SIATR integrated power module features an inrush current limit and an output voltage slew rate limit. The inrush current limit prevents the device from being subjected to excessive inrush current when power is initially applied. The output voltage slew rate limit helps to ensure that the output voltage remains stable and within the expected parameters. Additionally, the IXDD609SIATR includes a built-in protection circuit that safeguards the device against excessive temperature, over-power, and ESD events. It also offers an advanced feature set that includes an adjustable source and sink current limit, adjustable gate slew rate, and adjustable rise/fall time. All of these features contribute to the superior performance of the IXDD609SIATR.

Benefits

The IXDD609SIATR offers a wide range of benefits. It is able to provide more reliable operation with lower power consumption and better protection against over-voltage and over-current. It is also more cost effective than conventional solutions. It is capable of driving a MOSFET or IGBT in a wide range of applications, including automotive, industrial, audio, and battery management. Additionally, the IXDD609SIATR is able to meet the highest power requirements for high power designs.

The specific data is subject to PDF, and the above content is for reference

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