IXH611S1T/R

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Driven Configuration:	--
Channel Type:	--
Gate Type:	--
Voltage - Supply:	--
Logic Voltage - VIL, VIH:	--
Current - Peak Output (Source, Sink):	--
Input Type:	--
Rise / Fall Time (Typ):	--
Operating Temperature:	--
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SOIC
Base Part Number:	IX*611

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Introduction

PMIC Gate Drivers are components used to control semiconductor switches such as power MOSFETs and IGBTs. They are designed to turn on and off quickly, meaning they are best suited for high frequency switching of power circuits. One particular driver is the IXH611S1T/R, which is a dual high side with integrated Schottky diodes. This article will discuss its application fields and working principle.

Application Fields

The IXH611S1T/R is recommended for use in applications such as motor control and lighting, as well as many other industrial, medical and commercial tasks. Its integrated Schottky diodes reduce the current switching latency, making it well suited for high frequency switching.Because this driver has a high Switching frequency, it is well suited for applications that require fast switching. It can be used to control current in wide-bandgap power transistors, making it suitable for applications that require high power and fast operation. In addition, its integrated Schottky diodes reduce the switching latency and improve the stability of the circuits.

Working Principle

The IXH611S1T/R is an integrated high-side gate driver with an integrated schottky diode. It is designed to control the power transistors, such as MOSFETs and IGBTs.The working principle of the IXH611S1T/R is based on the ability of its integrated Schottky diode to reduce the reverse recovery time of the MOSFET. When the diode is turned on, the voltage across it is limited, resulting in a reduced flow of current. This is important, as it allows the power MOSFET to be switched on quicker, improving the speed at which it can be activated and deactivated.The IXH611S1T/R also features anti-saturation protection. This is a feature that prevents the MOSFET from entering into an “on” state when it is already in an “off” state. This helps to minimize switching delays, as it avoids the need to wait for the state of the MOSFET to change.

Conclusion

The IXH611S1T/R is a dual high-side, integrated Schottky diode gate driver. It is recommended for applications such as motor control, lighting, and many other industrial, medical and commercial tasks. The driver is capable of controlling current in wide band-gap transistors, resulting in quick switching times and increased circuit stability. Its anti-saturation protection feature prevents the power MOSFET from entering an “on” state when it is already in an “off” state, resulting in faster operation. The IXH611S1T/R is an ideal component for high frequency switching of power circuits.

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