IXXK100N60C3H1 Allicdata Electronics
Allicdata Part #:

IXXK100N60C3H1-ND

Manufacturer Part#:

IXXK100N60C3H1

Price: $ 14.73
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 600V 170A 695W TO264
More Detail: IGBT PT 600V 170A 695W Through Hole TO-264 (IXXK)
DataSheet: IXXK100N60C3H1 datasheetIXXK100N60C3H1 Datasheet/PDF
Quantity: 33
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 13.38750
10 +: $ 12.17160
25 +: $ 11.25890
100 +: $ 10.34590
250 +: $ 9.43299
Stock 33Can Ship Immediately
$ 14.73
Specifications
Switching Energy: 2mJ (on), 950µJ (off)
Base Part Number: IXX*N60
Supplier Device Package: TO-264 (IXXK)
Package / Case: TO-264-3, TO-264AA Variation
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 140ns
Test Condition: 360V, 70A, 2 Ohm, 15V
Td (on/off) @ 25°C: 30ns/90ns
Gate Charge: 150nC
Input Type: Standard
Series: GenX3™, XPT™
Power - Max: 695W
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 70A
Current - Collector Pulsed (Icm): 340A
Current - Collector (Ic) (Max): 170A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: PT
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The IXXK100N60C3H1 is an IGBT, short for Insulated-Gate Bipolar Transistor, manufactured by IXYS Corporation. It is a type of transistor that combines the benefits of a MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) and a bipolar junction transistor (BJT). Its unique combination of features makes it an ideal choice for many applications.

The IXXK100N60C3H1 is a single-die IGBT. It has a maximum collector current of 100A, maximum collector-emitter voltage of 600V, and maximum Pulsed Collector Current of 400A. It has a maximum junction temperature of 175°C, and its average gate charge is 7.4nC. It is housed in a TO-247AC package.

IGBTs are widely used in power electronics applications. The IXXK100N60C3H1 can be used in power inverters, motor drives, machine tools, UPS systems, and renewable energy systems. It can also be used in AC/DC converters, temperature and voltage controllers, welding machines, lighting systems, and relays. The IXXK100N60C3H1 is also suitable for a number of industrial applications, including automotive, aerospace, medical, and electrical equipment.

The IXXK100N60C3H1 offers a number of advantages compared to other transistors. It offers a fast switching speed and is capable of handling high voltages and currents. It is also efficient and has a low gate drive requirement. Additionally, it has an excellent thermal behavior, which makes it suitable for a wide range of applications.

The IXXK100N60C3H1 works by using an electric field to control the movement of electrons. When the gate voltage is applied, an electric field is generated that attracts electron carriers from the drain to the source. This creates an inversion channel, which allows the current to flow between the drain and the source. The amount of current that can flow through the channel is controlled by the gate voltage. The IXXK100N60C3H1 has a low on-state resistance, which helps reduce power losses.

In conclusion, the IXXK100N60C3H1 is a single-die IGBT that offers a wide range of benefits. Its combination of features makes it an ideal choice for many power electronics applications, such as inverters and motor drives. It is capable of handling high voltages and currents, offers low gate drive requirements, and has an excellent thermal behavior. The IXXK100N60C3H1 is a reliable and efficient choice for any application that requires a transistor.

The specific data is subject to PDF, and the above content is for reference

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