
Allicdata Part #: | IXXK110N65B4H1-ND |
Manufacturer Part#: |
IXXK110N65B4H1 |
Price: | $ 8.37 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | IGBT 650V 240A 880W TO264 |
More Detail: | IGBT PT 650V 240A 880W Through Hole TO-264 (IXXK) |
DataSheet: | ![]() |
Quantity: | 38 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | $ 7.61040 |
10 +: | $ 6.91929 |
25 +: | $ 6.40030 |
100 +: | $ 5.88143 |
250 +: | $ 5.36246 |
500 +: | $ 5.01649 |
Switching Energy: | 2.2mJ (on), 1.05mJ (off) |
Base Part Number: | 110N65 |
Supplier Device Package: | TO-264 (IXXK) |
Package / Case: | TO-264-3, TO-264AA |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Reverse Recovery Time (trr): | 100ns |
Test Condition: | 400V, 55A, 2 Ohm, 15V |
Td (on/off) @ 25°C: | 38ns/156ns |
Gate Charge: | 183nC |
Input Type: | Standard |
Series: | GenX4™, XPT™ |
Power - Max: | 880W |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 110A |
Current - Collector Pulsed (Icm): | 630A |
Current - Collector (Ic) (Max): | 240A |
Voltage - Collector Emitter Breakdown (Max): | 650V |
IGBT Type: | PT |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
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The IXXK110N65B4H1 is a single IGBT designed for many applications. It is part of the IXXK series of IGBTs manufactured by IXYS and is specifically designed with high performance and reliability in mind. Due to its ability to handle large currents and its low noise, the IXXK110N65B4H1 is ideal for many industrial and commercial applications, such as motor control, power conversion and welding.
An IGBT is a type of transistor that is able to switch large currents, making it an excellent choice for high power applications. IGBTs are also able to switch more quickly than traditional power transistors, allowing for improved efficiency and faster response times. The IXXK110N65B4H1 is no exception to this, and is capable of switching currents up to 110A and voltages up to 650V.
The IXXK110N65B4H1 is also designed with a number of features to ensure its reliability and performance. Firstly, it features a normal mode which limits current rise times, making it suitable for pulse applications. Secondly, the IGBT is equipped with a built-in, low-noise, zener-diode saturation voltage adjustable output isolator which helps to reduce EMI, making it an ideal choice for audio and telecommunications applications. Additionally, the transistor is designed with a short-circuit protection circuit and over temperature detection, providing protection from short circuits and overheating.
The IXXK110N65B4H1 is designed for a wide range of commercial, industrial and consumer applications, such as solar inverters, motor drives, home appliances and welding. It is ideal for applications where size is a factor, due to its small packaging size, as well as its ability to handle large currents and voltages. Additionally, the IGBT is suitable for low-noise applications due to its low switching noise and its adjustable zener-diode saturation voltage output isolator.
The IXXK110N65B4H1 is a single-ended IGBT which utilizes an insulated gate structure to allow for high-voltage operation and fast switching times. The IGBT works by using a small electrical charge applied to the gate of the device in order to control the flow of current between the collector and the emitter. In operation, a positive voltage is applied to the gate of the IGBT, which triggers the opening of a channel between the collector and the emitter. As the voltage increases, the channel widens, allowing for more current to flow through.
The IXXK110N65B4H1 is a single IGBT designed for a variety of applications. It is able to handle large currents and voltages, making it suitable for motor control, power conversion, welding and home appliance applications. Additionally, the IGBT is designed with a number of features which ensure reliability and performance, such as its adjustable zener-diode saturation voltage output isolator and its short-circuit protection circuit. The IGBT works by applying a positive voltage to the gate of the device, which triggers the opening of a channel between the collector and the emitter.
The specific data is subject to PDF, and the above content is for reference
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