IXXK200N60B3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IXXK200N60B3 is one of the latest advancements in power semiconductors. It is a patented planar terminated insulated gate bipolar transistor (PTIGBT), designed to offer greater power efficiency, higher current capability and improved thermal performance. The IXXK200N60B3 is a single IGBT that is widely used in many applications, from motor drives and power supplies to ancillary circuitry for safe operation. This article will look at the IXXK200N60B3’s application field and working principle.

Application Field

The IXXK200N60B3 can be used in a variety of applications including motor drives, power supplies, and ancillary circuitry. Its wide range of applications and low price make it a great choice for many types of projects.

The IXXK200N60B3 is most commonly used in motor drives and control systems, as its rugged construction, low on-state resistance, and high current capability make it ideal for controlling the speed and direction of a motor. It is also used in power supplies, where its ability to quickly switch high currents efficiently helps ensure a reliable voltage supply to the system.

Finally, the IXXK200N60B3 is also used in ancillary circuitry, as its low on-state resistance helps provide safe operation of current-limited devices. This makes the IXXK200N60B3 a great choice for applications that require protection from overloads or short circuits.

Working Principle

The IXXK200N60B3 is a single insulated gate bipolar transistor (IGBT). It consists of two back-to-back p-n junctions; a base layer below the gate and an emitter layer above the gate. The gate voltage controls the flow of current between the emitter and collector layers. Gate voltage is always negative, and when it is higher than the emitter voltage, a small amount of current is allowed to flow through the transistor.

In the IXXK200N60B3, the gate is insulated from the emitter and collector electrodes by a special insulating layer. This layer limits the amount of current that can flow through the transistor and also ensures that any charge carriers (electrons or holes) created are confined to the transistor. This increases the efficiency of the IXXK200N60B3, enabling it to switch high current loads quickly and efficiently.

The IXXK200N60B3 also features a planar termination, which helps provide excellent thermal performance. The flat termination surface increases the surface area of contact between the transistor and the heat source, helping to reduce the overall power dissipation of the transistor.

Overall, the IXXK200N60B3 is an excellent choice for many power applications thanks to its low on-state resistance, high current capability, and planar termination. Its wide range of applications and low price make it a great choice for many types of projects.

The specific data is subject to PDF, and the above content is for reference