![IXXK160N65C4 Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | IXXK160N65C4-ND |
Manufacturer Part#: |
IXXK160N65C4 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | IGBT 650V 290A 940W TO264 |
More Detail: | IGBT PT 650V 290A 940W Through Hole TO-264 (IXXK) |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Switching Energy: | 3.5mJ (on), 1.3mJ (off) |
Base Part Number: | 160N65 |
Supplier Device Package: | TO-264 (IXXK) |
Package / Case: | TO-264-3, TO-264AA |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Test Condition: | 400V, 80A, 1 Ohm, 15V |
Td (on/off) @ 25°C: | 52ns/197ns |
Gate Charge: | 422nC |
Input Type: | Standard |
Series: | GenX4™, XPT™ |
Power - Max: | 940W |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 160A |
Current - Collector Pulsed (Icm): | 800A |
Current - Collector (Ic) (Max): | 290A |
Voltage - Collector Emitter Breakdown (Max): | 650V |
IGBT Type: | PT |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The IXYS IXXK160N65C4 is a high-performance Insulated Gate Bipolar Transistor (IGBT). It is part of the IXYS IXXK family of Insulated Gate Bipolar Transistors, which are designed to meet the needs of applications ranging from industrial and commercial to aerospace and military. IXXK160N65C4 is a single-chip IGBT device. It is designed to handle large currents and operates in the range of -20 to 150℃.
IXXK160N65C4 has a low, forward-on resistance, low thermal noise, low capacitance and low switching losses, making it an ideal choice for applications that require high speed switching, such as motor control, high voltage, and power management.
The IXXK160N65C4 also has an additional gate-grounded diode feature, which helps to lower costs and reduce power dissipation. This feature also helps to reduce the risk of breakdown due to parasitic currents.
The IXXK160N65C4 is ideal for a variety of applications such as motor control, power conversion, motor starter systems and motor drive systems. It can be used in a variety of motor control and power applications including inverters, converters, electronics and robotics.
The working principle of the IXXK160N65C4 is based on the three-terminal concept of an Insulated Gate Bipolar Transistor. It consists of two IGBTs coupled together and sandwiched between two isolated electrodes. The central electrode is the gate, which is insulated from the two surrounding electrodes by a dielectric. When a voltage is applied to the gate, a electric field is generated between the electrodes and this cause charges to flow between them, activating the IGBT.
The IXXK160N65C4 offers high efficiency and performance plus low reverse recovery losses. Its optimized power module design provides an ideal device for applications needing high power ratings and low losses. The IXXK160N65C4 also has a wide range of operating temperature and high surge current capability.
In conclusion, the IXYS IXXK160N65C4 is a single-chip IGBT device. It is suitable for a wide range of applications including motor control, power conversion, motor starter systems, and motor drive systems. The IXXK160N65C4 offers high efficiency, performance, low reverse recovery losses and a wide range of operating temperature. Additionally, its optimized power module design ensures high power ratings and low losses.
The specific data is subject to PDF, and the above content is for reference
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