IXYN30N170CV1 Discrete Semiconductor Products

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IXYN30N170CV1 is an insulated-gate bipolar transistor (IGBT) device manufactured by IXYS, suitable for various applications such as motor control and power conditioning. It is a Single IGBT which is suitable for use in high power applications, such as motor drives, welding, solar inverters, and other high power voltage control applications.

This device consists of a gallium nitride (GaN) vertical MOS transistor and a N-channel field-stop IGBT in series, which are isolated by a planar passivation structure and a junction isolation layer. The device has a collector-emitter resistance (on-resistance) of less than 1.7 mΩ, making it suitable for high power applications. Additionally, its low voltage drop and low gate charge allows for improved power efficiency.

The IXYN30N170CV1 has a maximum collector-emitter voltage of 1700V, and a maximum collector current rating of 30A. It is a non-punchthrough device with a high blocking voltage capability and a temperature range from -55°C to 175°C. Additionally, the device can handle an avalanche energy rating of 400 mJ when avalanche conditions are met.

When using the IXYN30N170CV1 as an IGBT, its working principle is similar to that of a standard MOSFET. In the OFF state, the gate terminal is taken to a high potential, which is then transferred to the body terminal. This high potential creates an electric field which attracts the majority carriers (electrons) to the body side and away from the source, thus shutting off the device.

In the ON state, the gate terminal is taken to a low voltage and as the current begins to flow, electrons are attracted to the gate electrode, increasing the conductivity between the drain and source. This increased conductivity increases the drain current and the transistor is turned ON. The high capability of this device to handle high voltage and current, together with its low on-state voltage drop make it an ideal choice for use in motor control, power conditioning and other high power applications.

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