IXYN82N120C3H1

Series:	XPT™, GenX3™
Part Status:	Active
IGBT Type:	--
Configuration:	Single
Voltage - Collector Emitter Breakdown (Max):	1200V
Current - Collector (Ic) (Max):	105A
Power - Max:	500W
Vce(on) (Max) @ Vge, Ic:	3.2V @ 15V, 82A
Current - Collector Cutoff (Max):	50µA
Input Capacitance (Cies) @ Vce:	4060pF @ 25V
Input:	Standard
NTC Thermistor:	No
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	SOT-227-4, miniBLOC
Supplier Device Package:	SOT-227B

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IXYN82N120C3H1 Application Field and Working Principle

Introduction to IXYN82N120C3H1

The IXYN82N120C3H1 is an insulated-gate bipolar transistor (IGBT) module manufactured by Infineon Technologies. It is designed for use in applications requiring up to 1200V, 82A/1400V, and 1250W. The module features a soft reverse-conducting IGBT, a built-in diode, and fast recovery time. The device is suited for high-voltage and high-power application, such as welding and induction heating.

Application Fields of IXYN82N120C3H1

The IXYN82N120C3H1 is widely used in various applications such as welding, induction heating, and solar cell interconnects. This module is suitable for applications requiring high voltage and high power. In welding and soldering, the IXYN82N120C3H1 can be used to power resistance and arc welding machines. It offers high switching speed, low losses, and durable quality in critical applications. The module also has wide applications in industries such as automotive, aviation, and electronics.In induction heating, the IXYN82N120C3H1 is frequently used to transfer power to heaters and coils. This type of heating is more efficient than the traditional method because it uses less energy and produces better results. The module provides greater power efficiency, improved power delivery and increased safety for industrial heating tasks.In solar cell interconnects, the IXYN82N120C3H1 is ideal for powering the inverter to convert direct current from photovoltaic panels into alternating current. Its high switching speed and fast recovery time can reduce losses and save energy. The module also has high current ratings to deliver peak power when needed.

Working Principle of IXYN82N120C3H1

The IXYN82N120C3H1 is an IGBT module that operates based on insulated-gate bipolar transistor (IGBT) technology. It consists of two main parts, a main element and a control element. The main element includes a bipolar transistor and an insulated-gate FET that are connected in series. The bipolar transistor is used to conduct current from the collector to the emitter. The insulated-gate FET is used to control the operation of the main element by varying the voltage between the gate and the source.The operation of the IXYN82N120C3H1 can be controlled by the gate signal. When a positive gate signal is applied, current will flow from collector to emitter of the module, turning on the power switch. When a negative gate signal is applied, the module will be in the off state. This allows the IXYN82N120C3H1 to be used as an on/off switch to control the current in the load circuit.

Conclusion

The IXYN82N120C3H1 is an IGBT module that is well suited for applications requiring up to 1200V, 82A/1400V, and 1250W. It is widely used in welding, induction heating and solar cell interconnects. The working principle of the IXYN82N120C3H1 is based on IGBT technology, where a bipolar transistor and an insulated-gate FET are connected in series. The module can be turned on or off by varying the voltage between the gate and the source.

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