IXYN50N170CV1 Discrete Semiconductor Products |
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Allicdata Part #: | IXYN50N170CV1-ND |
Manufacturer Part#: |
IXYN50N170CV1 |
Price: | $ 34.21 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | IGBT 1700V 120A SOT227B |
More Detail: | IGBT 1700V 120A 880W Chassis Mount SOT-227B |
DataSheet: | IXYN50N170CV1 Datasheet/PDF |
Quantity: | 10 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | $ 31.09680 |
10 +: | $ 29.07830 |
100 +: | $ 25.21260 |
Power - Max: | 880W |
Supplier Device Package: | SOT-227B |
Package / Case: | SOT-227-4, miniBLOC |
Mounting Type: | Chassis Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Reverse Recovery Time (trr): | 255ns |
Test Condition: | 850V, 50A, 1 Ohm, 15V |
Td (on/off) @ 25°C: | 22ns/236ns |
Gate Charge: | 260nC |
Input Type: | Standard |
Switching Energy: | 8.7mJ (on), 5.6mJ (off) |
Series: | XPT™ |
Vce(on) (Max) @ Vge, Ic: | 3.7V @ 15V, 50A |
Current - Collector Pulsed (Icm): | 485A |
Current - Collector (Ic) (Max): | 120A |
Voltage - Collector Emitter Breakdown (Max): | 1700V |
IGBT Type: | -- |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
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The IXYN50N170CV1 is a single IGBT transistor that is primarily used in commercial applications. It is a power switching device that can handle large currents and high voltage. The electronic device also has relatively low on-state losses. The IXYN50N170CV1 is designed for high-frequency switching and can handle up to a 50A current and a 1700 volt voltage. This makes the device well-suited for multiple applications from power electronics to inverter designs.
The principle of operation of the IXYN50N170CV1 is the same as other IGBTs; the device relies on the use of two separate components: a PNP transistor for the input (control) and an NPN transistor for the output (switching). When the transistor is in the OFF-state, the N-channel FET remains closed, preventing any current from flowing through the device. When the transistor is in the ON-state, the PNP transistor is activated, allowing current to flow through the device. To reduce power consumption in the device, the voltage drop is minimized using a low-voltage MOSFET. This helps reduce power dissipation and contributes to a better efficiency.
The IXYN50N170CV1 has a range of practical applications. Due to its ability to handle high current and voltage, it can be used in commercial applications such as welding and electric motor controllers. It is also suitable for use in power switching circuits, including power supplies and inverters, as well as motor control systems and motor drives. The IXYN50N170CV1 also has uses in solar power systems, electrical generators, and lighting control systems. Additionally, the low-voltage drive makes it suitable for battery-based applications such as portable electronic devices.
In summary, the IXYN50N170CV1 is a single IGBT transistor. It is designed for high-frequency switching, and can handle up to a 50A current and a 1700 volt voltage. The device is well-suited for multiple applications in power electronics and inverter designs, as well as aspects of motor control and power switching systems. Additionally, the transistor is also suitable for use in solar power systems, electrical generators, and lighting control systems. Additionally, the low-voltage drive makes the IXYN50N170CV1 ideal for battery-based applications. As such, it is a highly versatile device, meeting multiple needs in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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