IXYN80N90C3H1 Allicdata Electronics
Allicdata Part #:

IXYN80N90C3H1-ND

Manufacturer Part#:

IXYN80N90C3H1

Price: $ 23.91
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 900V 115A 500W C3 SOT-227
More Detail: IGBT Module Single 900V 115A 500W Chassis Mount S...
DataSheet: IXYN80N90C3H1 datasheetIXYN80N90C3H1 Datasheet/PDF
Quantity: 16
1 +: $ 21.73500
10 +: $ 20.10640
25 +: $ 18.47640
100 +: $ 17.17220
Stock 16Can Ship Immediately
$ 23.91
Specifications
Series: GenX3™, XPT™
Part Status: Active
IGBT Type: --
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 900V
Current - Collector (Ic) (Max): 115A
Power - Max: 500W
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 80A
Current - Collector Cutoff (Max): 25µA
Input Capacitance (Cies) @ Vce: 4.55nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227B
Description

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Transistors - IGBTs - Modules

The IXYN80N90C3H1 is a module used for In-line Gate Bipolar Transistors (IGBTs). IGBTs are a type of transistor that is able to control large currents. This type of transistor has a low on-state voltage drop, making it highly efficient. In addition, it has fast switching times and a high frequency response, making it suitable for a wide range of applications, including energy conversion and motor control.

The IXYN80N90C3H1 module consists of two IGBTs connected in a parallel circuit. This arrangement provides the user with two transistors connected in parallel, which increases the current handling capacity of the module while also reducing the voltage drop across the circuit. The low on-state voltage drop allows more power to be transmitted with less losses, making it an ideal component for applications such as high-power motor control.

The IGBTs in the IXYN80N90C3H1 are connected to an isolation diode, which acts as a safety feature for protecting the module from short-circuits or surges. The isolation diode helps to prevent damage by limiting the amount of current that can flow through the circuit in the event of a short-circuit or surge. In addition, the module includes a built-in snubber circuit, which helps to reduce voltage spikes that can occur during switching.

The IXYN80N90C3H1 module can be used in a variety of applications, including high power motor control, power switching, and energy conversion. The wide range of applications make this module an ideal choice for many applications where high power and efficiency are essential. Furthermore, the module is designed with features such as a low on-state voltage drop, fast switching times, and a high frequency response, which make it a suitable choice for a wide range of applications.

In addition to its wide range of applications, the IXYN80N90C3H1 module also offers a high level of reliability and durability. The module\'s robust design ensures that it can handle high power loads with minimal trouble and is suitable for applications that require reliable operation in a wide range of operating conditions. Furthermore, the module has been tested for vibration, shock, and humidity, ensuring that it remains reliable even under harsh environmental conditions.

In conclusion, the IXYN80N90C3H1 is a highly efficient, reliable, and durable IGBT module. It is suitable for a wide range of applications, including high-power motor control, power switching, and energy conversion. The module features low on-state voltage drop, fast switching times, and a high frequency response, making it ideal for many applications. Furthermore, the robust design ensures that it is suitable for even the most extreme operating conditions.

The specific data is subject to PDF, and the above content is for reference

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