IXZ210N50L2

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The IXZ210N50L2 is a multi-mode, high power & low noise lateral DMOS FET (field effect transistor). It is designed primarily for any application which calls for RF power, such as Class AB Linear Amplifiers and Class C High-Efficiency Switches. It can also be used in VHF/UHF and Microwave applications, such as Radio Transceivers and TV Transmitters, as well as various other circuitry where a high level of efficiency and improved noise performance is a necessity.

The IXZ210N50L2 is a N-type N–channel DMOS FET (dual metal oxide semiconductor field effect transistor) composed of an N–type material sandwiched between two metal oxide layers. The N–type material forms the channels for the device to actively transfer a signal between its source and drain terminals. It differs from traditional MOSFETs in that it has two electrodes (gate and drain) and two n-connected regions (source and drain).

The IXZ210N50L2 is designed to switch high power, high frequency signals with fast settling time and low noise. The device employs Digital Mode Controlled (DMC) to achieve high efficiency, excellent linearity and low RF noise on both the signal and power ports. This advanced technology allows the device to be used with both voltage and current sources, as well as a combination of the two.

The IXZ210N50L2 uses a lateral DMOS process which utilizes an N–type silicon substrate. The process consists of two doped layers; a bottom layer of primarily boron and a top layer containing silicon. This structure allows for high RF gain and low saturation voltage; the result being greater efficiency, high power and low noise performance.

The gate of the IXZ210N50L2 is a depressed combination of polysilicon and metal gate. This gate structure minimizes gate capacitance and gate-drain overlap capacitance, thereby allowing for higher frequency operation. The gate capacitance also affects the output power and noise performance, resulting in a higher carrier to noise ratio.

The IXZ210N50L2 has a maximum drain-source voltage of 50 volts, a drain current of at least 210 millimperes, a gate-source voltage range of 0 to 18 volts and a maximum on-resistance between 3 to 4 milliohms. The device features a high breakdown voltage and a high thermal resistance. It also has a unique gate-source protection diode which allows for the device to be used in applications demanding high voltage spikes.

In order to ensure reliable operation and long term reliability, the IXZ210N50L2 incorporates low parasitic capacitances and junction capacitances, as well as low RF noise. The output power capability and efficiency of the device also has a wide operating temperature range of -55°C to +100°C.

The IXZ210N50L2 application field and working principle can best be summed up as being a high power and low noise lateral DMOS FET designed primarily for any application which calls for RF power, such as Class AB Linear Amplifiers and Class C High-Efficiency Switches. It utilizes a combination of Digital Mode Controlled to achieve high efficiency, excellent linearity and low RF noise on both the signal and power ports, while also incorporating low parasitic capacitances and junction capacitances for long term reliability.

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