IXZ318N50

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IXZ318N50 is an n-channel Enhancement Mode and Lateral Double Diffused MOSFET (D-MOSFET) that belongs to IXYS\' ZR385xx family. The device is designed to be used for radio frequency (RF) applications. Due to its small size, less power dissipation, and relatively low input capacitance, it offers improved performance in terms of signal integrity and power efficiency.

A field-effect transistor (FET) is basically a three-terminal device composed of a gate, source, and drain. It works on a principle of electrostatic induction, wherein the application of voltage between the gate and source alters the conductivity of the channel between the source and drain. When the voltage applied to the gate increases, more current can pass through the device, resulting in controlled amplification.

The IXZ318N50 is an n-channel field-effect transistor, meaning it has the gate terminal connected to the source, and the source and drain of the device have both a negative connection. This symmetrical FET is designed to provide good gain and bandwidth characteristics, making it highly suitable for RF applications.

The device is based on IXYS\' advanced ZR385xx technology, which uses a patented symmetrical lateral double-diffused MOSFET (D-MOSFET) design. This technology allows the device to have a fast switching response, excellent power handling capabilities, and minimal voltage loss. Additionally, the device exhibits very low input capacitance, making it ideal for high frequency applications.

The IXZ318N50 is particularly suited for use in radio frequency (RF) applications, such as wireless radio link, receivers and transmitters, digital radio, and HDTV systems. Its small size, low power dissipation, and relatively low input capacitance make it ideal for use in these types of applications. Additionally, its fast switching response and excellent power handling capabilities make it well suited for use as an RF power amplifier.

The device is also suitable for a wide range of applications, such as switching power supplies, motor control, and DC-DC converters. The IXZ318N50 has a drain-source voltage rating of 150V and an on-resistance rating of 530 Ohms. Its low input capacitance and fast switching response make it highly suitable for applications requiring highBandwidth.

To summarize, the IXZ318N50 is an n-channel field-effect transistor (FET) from IXYS\' ZR385xx family. It is specially designed for radio frequency (RF) applications, due to its small size, low power dissipation, and low input capacitance. Furthermore, it offers excellent power handling capabilities and fast switching response, making it an ideal choice for use in a wide range of applications, such as wireless radio link, transmitters/receivers, motor control, and DC-DC switching.

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