Allicdata Part #: | J110_D75Z-ND |
Manufacturer Part#: |
J110_D75Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | JFET N-CH 25V 625MW TO92 |
More Detail: | JFET N-Channel 25V 625mW Through Hole TO-92-3 |
DataSheet: | J110_D75Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Voltage - Breakdown (V(BR)GSS): | 25V |
Current - Drain (Idss) @ Vds (Vgs=0): | 10mA @ 15V |
Voltage - Cutoff (VGS off) @ Id: | 500mV @ 10nA |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Resistance - RDS(On): | 18 Ohms |
Power - Max: | 625mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | J110 |
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A junction field-effect transistor (JFET) is one of the three types of field-effect transistors and is the most commonly used type. JFETs are widely used in analog circuits, primarily as amplifiers or digital integrated circuits, such as those in computers and mobile phones. The most common type of JFET is the n-channel JFET (nJFET). The "J" in the term JFET is usually taken to stand for "junction" because the device is made of one p-type and one n-type semiconductor region, forming a junction. The type of junction field-effect transistors (JFETs) used in electronics are divided into two categories: depletion mode and enhancement mode. The main difference between depletion and enhancement mode JFETs is whether the gate has to be biased to allow the current to flow through the channel or not.
One particular type of junction field-effect transistor is the J110_D75Z. Having a high-voltage breakdown of 125 volts, the J110_D75Z is used primarily in power applications. It is a depletion-mode device, meaning its gate must be biased to turn the current on. The J110_D75Z consists of a three-terminal device, namely the source, gate, and the drain. The source and the drain terminals serve as the input and output terminals where the control is done through the gate terminal. The J110_D75Z has an excellent maximum drain current (Idss) of 11 amperes. It is highly temperature-stable and has a low on-resistance of 75Ω.
The working principle of the J110_D75Z is straightforward. When a voltage is applied between the gate and the source, a depletion region is formed across the channel between the source and drain. This region effectively reduces the channel conductance, and hence, the current carrying capacity of the device. Depending on the voltage applied between the gate and the source, this region can be widened or narrowed. Thus, by controlling the gate voltage, the current through the channel can be turned on or off.
The J110_D75Z is principally used in automotive and general industrial applications. It finds usage as a switch in electronic circuits, as reset switches in integrated circuits, as alarm systems in automobiles, and as a switch in power supplies. The power dissipation of this device is also quite high, making it ideal for applications which require switching of large currents. It is also ideal for applications which involve extended drain-source voltage operations.
In conclusion, the J110_D75Z is a depletion-mode type of junction field-effect transistor (JFET), which is extensively used in power applications. It has excellent features such as, high voltage breakdown of 125 volts, a low on-resistance of 75Ω, a high maximum drain current of 11 amperes, and excellent temperature stability. The working principle is understood from the creation of a depletion region across the channel. These features make it ideal for automotive and general industrial applications.
The specific data is subject to PDF, and the above content is for reference
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