J110,126 Allicdata Electronics
Allicdata Part #:

J110,126-ND

Manufacturer Part#:

J110,126

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: JFET N-CH 25V 0.4W SOT54
More Detail: JFET N-Channel 25V 400mW Through Hole TO-92-3
DataSheet: J110,126 datasheetJ110,126 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 25V
Drain to Source Voltage (Vdss): 25V
Current - Drain (Idss) @ Vds (Vgs=0): 10mA @ 5V
Voltage - Cutoff (VGS off) @ Id: 4V @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V
Resistance - RDS(On): 18 Ohms
Power - Max: 400mW
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: J110
Description

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The JFET transistors are among the most widely used transistors, which are composed of three layers of doped semiconductor materials. JFETs can be used to control the current flow within an electronic device and convert the electrical signal into a voltage or current. JFETs are known for their low-power operation and wide range of applications. Two common types of JFETs are the J110 and J126 transistors. In this article, we will discuss the application field, working principle and comparison between the two transistors.

Application Field

JFETs are widely used in many types of electronic devices. For example, JFETs can be used for switching and for amplifying signals, making them ideal for creating circuits that are sensitive to small signals and low-powered enough to save battery life. Other applications of JFETs include voltage regulators and voltage detection in power management, audio circuits and logic circuits.

Working Principle

JFETs are comprised of three layers of doped semiconductor materials. The first layer, which is the gate, controls the flow of current between the drain and source. The second layer, the drain, is the output of the transistor, while the third layer, the source, is the input. When a voltage is applied to the gate, it creates a depletion region in the semiconductor material. This depletion region controls the flow of current from the source to the drain and creates a voltage or current signal that can be manipulated in an electronic circuit.

The working principle of JFETs is relatively simple. The current flow in the transistor is controlled by the voltage applied to the gate. When the voltage applied to the gate is high, the depletion region created in the semiconductor material increases, thus reducing the flow of current from the source to the drain. On the other hand, when the voltage to the gate is low, the depletion region is decreased and the current flow increases.

J110 vs J126 Transistors

The J110 and J126 transistors are two of the most commonly used JFETs. The J110 is a P-type transistor, meaning that it creates a depletion region in the semiconductor material. This reduces the resistance of the source to the drain and increases the current flow in the circuit. The J126, on the other hand, is an N-type transistor, which means that it creates an accumulation region in the semiconductor material. This increases the resistance of the source to the drain and reduces the current flow in the circuit. In terms of application, the J110 transistor is often used for switching applications, while the J126 can be used in amplifying signals.

Both the J110 and J126 transistors are essential components of many electronic devices. While they may have different applications, both transistors are versatile and can be used in a variety of situations. The choice between the two transistors should depend on the specific needs of the circuit, so it is important to understand the characteristics of each transistor and to choose a transistor that best suits the specific application.

The specific data is subject to PDF, and the above content is for reference

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