Allicdata Part #: | J176_D27Z-ND |
Manufacturer Part#: |
J176_D27Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | JFET P-CH 30V 0.35W TO92 |
More Detail: | JFET P-Channel 30V 350mW Through Hole TO-92-3 |
DataSheet: | J176_D27Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
FET Type: | P-Channel |
Voltage - Breakdown (V(BR)GSS): | 30V |
Current - Drain (Idss) @ Vds (Vgs=0): | 2mA @ 15V |
Voltage - Cutoff (VGS off) @ Id: | 1V @ 10nA |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Resistance - RDS(On): | 250 Ohms |
Power - Max: | 350mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | J176 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
A Junction Field Effect Transistor (JFET) is an integral component of the field of electronics. It is an electronic component, which combines an electrostatic field and a function of an electronic valve in order to form a junction between two electrodes. The JFET is a three-terminal semiconductor device that uses reverse-biased p-n junctions to create a voltage-controlled current source or sink. The JFET operates in two modes, either as an amplifying device or as a rectifying device. The J176_D37Z is an example of the Junction Field Effect Transistor.
The J176_D27Z is a Field Effect Transistor (JFET) device with a single n-channel depletion type that can handle up to 65 volts. It is a low noise monolithic transistor available in a variety of packages ranging from the small SOT-23 packages to the larger TO-92 packages. It is used in a wide range of applications such as amplifiers, pre-amplifiers, filters, switching, and other audio and video circuit applications. It has a relatively low input capacitance and low gate leakage current, thus making it ideal for use in high frequency applications.
The working principle of the J176_D27Z is that it utilizes the so-called "junction-effect" to achieve a voltage-controlled current from one part of the device to another. It consists of a p-type region and an n-type region connected together by a structure known as the Schottky barrier. When a gate voltage is applied to the JFET, the Schottky barrier conducts to allow electrons to move from the n-type region to the p-type region, thus creating an electric field. This electric field is then modulated by the gate voltage, which can be used to adjust and control the current flow through the device.
One of the main features of the J176_D27Z is its durable ad robust construction. It is constructed using gold metallization, which makes it highly reliable and able to operate over a wide temperature range. Additionally, the J176_D27Z offers high breakdown voltages and low drain-source capacitance, thus making it an ideal choice for high frequency applications. Moreover, the device also offers excellent frequency response, low noise, and high gain characteristics that are suitable for a variety of audio and video applications.
In conclusion, the J176_D27Z Junction Field Effect Transistor is a versatile device that is suitable for a wide range of applications. It is robust, highly reliable, and offers high breakdown voltages and low drain-source capacitance. Additionally, it works on the principle of a reverse-biased p-n junction that allows it to be used as an amplifying device or as a rectifying device. Therefore, it is an ideal choice for high frequency applications in audio and video applications, and other general purpose applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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J176-D74Z | ON Semicondu... | 0.09 $ | 2000 | JFET P-CH 30V 0.35W TO92J... |
J176_D27Z | ON Semicondu... | 0.0 $ | 1000 | JFET P-CH 30V 0.35W TO92J... |
J176 | ON Semicondu... | -- | 1000 | JFET P-CH 30V 0.35W TO92J... |
J176_D26Z | ON Semicondu... | 0.0 $ | 1000 | JFET P-CH 30V 0.35W TO92J... |
J176,126 | NXP USA Inc | 0.0 $ | 1000 | JFET P-CH 30V 400MW TO92-... |
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