J176,126 Allicdata Electronics
Allicdata Part #:

J176,126-ND

Manufacturer Part#:

J176,126

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: JFET P-CH 30V 400MW TO92-3
More Detail: JFET P-Channel 30V 400mW Through Hole TO-92
DataSheet: J176,126 datasheetJ176,126 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Drain to Source Voltage (Vdss): 30V
Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V
Voltage - Cutoff (VGS off) @ Id: 1V @ 10nA
Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 10V (VGS)
Resistance - RDS(On): 250 Ohms
Power - Max: 400mW
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92
Base Part Number: J176
Description

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The J176 and J126 general purpose Junction Field Effect Transistors (JFETs) are two of the oldest types of transistors available as of today. This type of transistor is used as a primary choice in many electronic components because of their high power and low input bias current. As such, they are often used in applications such as amplifiers, voltage regulators, oscillators, and motor drivers, among many others. They are also built with a long shelf life, making them highly reliable components.

The J176 and J126 both have the same three terminals: the source (S), the drain (D), and the gate (G). The source terminal provides the source of current for the transistor, while the drain terminal provides the current path for the transistor. The gate terminal provides the voltage control, which determines how much current is allowed to flow through the transistor. When voltage is applied to the gate terminal, the resistance between the source and drain terminals increases, creating a resistive field which disturbs current flow.

The two transistors also have the same basic working principle. In the off state, the gate is brought to a specific voltage by applying a negative or positive voltage. This voltage creates a depletion layer between the source and the drain, which blocks the flow of electrons. When the voltage is increased beyond the voltage required to create the depletion layer, the JFET will enter saturation, where the current will flow freely through the transistor. The voltage applied to the gate is known as the turn-on voltage since it needs to meet a certain threshold before the transistor will start allowing current to flow.

These transistors can also be used in complementing or opposing pairs in order to maximize current output. For example, a complementary pair can be used for positive and negative current outputs, respectively. In the same vein, opposing pairs can be used for applications where current is required to be limited. These transistors can also be used in other applications, such as signal rectification and switching circuits.

Due to the enormous versatility of these transistors, they are widely used in modern electronics. It is important to note, however, that most of these applications require precise calculations and measurements to ensure efficient and proper operation. Furthermore, the fact that these transistors are so susceptible to damage due to transient voltages must be taken into consideration when designing and building electronic components.

In summary, the J176 and J126 junction field effect transistors are highly versatile components which find their use in a variety of applications. They are characterized by their high power and low input bias current, making them ideal for power applications. Combined with their long shelf life, these transistors are a reliable choice in many applications.

The specific data is subject to PDF, and the above content is for reference

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