Allicdata Part #: | J176FS-ND |
Manufacturer Part#: |
J176 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | JFET P-CH 30V 0.35W TO92 |
More Detail: | JFET P-Channel 30V 350mW Through Hole TO-92-3 |
DataSheet: | J176 Datasheet/PDF |
Quantity: | 1000 |
Specifications
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
FET Type: | P-Channel |
Voltage - Breakdown (V(BR)GSS): | 30V |
Current - Drain (Idss) @ Vds (Vgs=0): | 2mA @ 15V |
Voltage - Cutoff (VGS off) @ Id: | 1V @ 10nA |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Resistance - RDS(On): | 250 Ohms |
Power - Max: | 350mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | J176 |
Description
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<div class="category">Transistors - JFETs</div><p>J176 field-effect transistors (FETs) are widely used in the modern electronics market. As an unipolar device, it features a high input impedance and low noise, making it useful in a wide array of applications.</p><p>The J176 FET is a type of junction FET (JFET) and consists of two sections – the gate and the source. It\'s similar to the more commonly used metal-oxide-semiconductor field-effect transistors (MOSFETs) but is designed to operate via the field-effect.</p><p>A simplified diagram illustrates the basic operation of the J176 FET. It comprises of a p-type substrate and n-type regions, both of which meet in an insulating region called the body.</p><p>The gate terminal of the FET is connected to a small oxide layer. Beneath this gate layer is the gate region, which is connected to a gate voltage.</p><p>An electric field is generated when a positive gate voltage is applied. This field pulls positively charged ‘holes’ from the p-type substrate to the n-type channel. These holes reduce the conductivity between the matching n-type source and drain electrodes.</p><p>In other words, when the gate voltage is made more positive, less current flows between the source and drain. When the gate voltage is made more negative, more current flows.</p><p>The J176 FET is one of the most versatile FETs, featuring a low input impedance, low noise performance and excellent frequency response. This type of FET is typically used in low noise amplifiers, voltage amplifiers, power amplifiers and current amplifiers. They are also often used in gain and frequency control circuits, pulse-width modulators, common-collector amplifiers, switched and multiplexed systems and samples and hold circuits.</p><p>Bipolar transistors are preferred in some applications where the FET is likely to saturate and require very high gate voltages. However, where efficiency and low-noise performance is more important the J176 FET is usually the preferred option.</p><p>Since the J176 FET is a low-current device, it is important to ensure that the FET is selected correctly for the application. Some of the key considerations when selecting a J176 FET include the maximum continuous drain current, the maximum continuous drain-source voltage and the frequency of operation. Also important is the power dissipation and maximum temperature, both of which will determine the operating parameters for the device.</p><p>The working principle of the J176 FET is relatively straightforward, making it one of the most commonly used and versatile FETs in the modern electronics market. With its low noise performance, low input impedance and excellent frequency response, it is highly useful in many applications.</p></div>
The specific data is subject to PDF, and the above content is for reference
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