Allicdata Part #: | J210_D27Z-ND |
Manufacturer Part#: |
J210_D27Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | JFET N-CH 25V 15MA TO92 |
More Detail: | RF Mosfet N-Channel JFET TO-92-3 |
DataSheet: | J210_D27Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | N-Channel JFET |
Frequency: | -- |
Gain: | -- |
Current Rating: | 15mA |
Noise Figure: | -- |
Power - Output: | -- |
Voltage - Rated: | 25V |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
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The J210_D27Z is a special type of metal-oxide-semiconductor field-effect transistor (MOSFET) that is particularly useful in radio frequency (RF) applications. This type of transistor is a voltage-controlled component, meaning that the current through a channel between its source and drain electrodes can be controlled by a voltage applied to the gate. This characteristic makes J210_D27Zs useful for a variety of applications due to their suitability for use in amplifiers and switches. In addition, their low capacitance and low impedance makes them particularly suitable for use in antennas, amplifiers, digital-to-analog converters, mixers, and other RF devices.
The J210_D27Z is a low-cost transistor with a maximum drain current rating of 10 amperes, a maximum drain-source voltage of 20 volts, and a maximum gate-source voltage of 10 volts. It is made with an insulation layer between the gate and source of the transistor, which prevents electrical leakage between the two. It also has an internal resistance (Rds) of 4.2 ohms, making it a low-power device. Additionally, the device has a low gate-drain capacitance of 5pF, allowing it to be used in high-frequency applications such as amplifiers, mixers, and voltage-controlled oscillators.
The working principle of the J210_D27Z is based on the "drain-gate" technology, which is also known as the "metal-oxide semiconductor field effect technology" (MOSFET). The source, drain and gate are connected to each other, and when a positive gate voltage is applied to the drain, a channel of low resistance is created between the source and drain. This allows a current to flow from the source to the drain, which is proportional to the applied gate voltage. This principle makes it possible for the J210_D27Z to be capable of both amplifying and switching signals, making it a desirable choice for boosting signals in RF applications.
The J210_D27Z is particularly well-suited for use in radios, remote-controlled toys, automobile radios, cordless phones, and other RF devices. It is also used in satellite receivers, converters, oscillators, and other electronic circuits. Additionally, it can be employed in the manufacturing of RF amplifiers, RF transmitters, RF receivers, and other RF circuit applications.
Due to its high performance with low power consumption, the J210_D27Z is an excellent choice for use in a variety of radio frequency applications. With its low resistance and low capacitance, it is suitable for amplifying, switching, and routing signals, making it an ideal choice for various RF projects. Furthermore, its low cost and ease of use make it ideal for use by novice users as well as experienced professionals.
The specific data is subject to PDF, and the above content is for reference
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