J211-D74Z Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The J211-D74Z is an N-Channel JFET (Junction Field Effect Transistor). It is a type of Field Effect Transistor (FET), specifically of the Metal Oxide Semiconductor FET (MOSFET) type. It is used mainly in high-frequency radio applications, or in any application where high impedance (high resistance) is needed.The J211-D74Z is a depletion-mode FET, which means that when no voltage is applied to its Gate (control electrode), the transistor is “on”, and current can flow through it freely. This is in contrast to the opposite effect that an enhancement-mode FET has, which needs a voltage applied to its Gate in order for current to flow.The J211-D74Z transistor has a Terminal-Gain (HFE) of 20 to 40 at a Gate-Source voltage of 8 Volts. This gain is simply the ratio of collector current to Gate-Source current for an applied voltage (i.e. the larger the HFE, the more linear the current transfer from input to output). This gain is low compared with other MOSFETs, but that is because it is a high-impedance device, and so its linearity is much higher.The J211-D74Z is capable of working at frequencies up to one Gigahertz (1 GHz). This makes it ideal for a variety of applications such as switches, frequency translators, amplifiers, antennas, and power circuits. The J211-D74Z also has a low input capacitance, which reduces distortion and increases gain at higher frequencies.When using the J211-D74Z in any application, there are a few points to keep in mind. Firstly, the Gate-Source leakage current must be kept to a minimum, as this can cause the FET to malfunction. Secondly, the maximum VDS (drain-source voltage) must not be exceeded, as this can cause damage to the device and reduce its reliability. Finally, the VGS (gate-source voltage) should be kept as low as possible to ensure optimal performance.In conclusion, the J211-D74Z is an N-Channel JFET, specifically of the MOSFET type, which is capable of working at frequencies up to one Gigahertz (1 GHz). It is mainly used in high-frequency radio applications, or in any application where high impedance (high resistance) is needed. Its low input capacitance reduces distortion and increases gain at high frequencies, while its low current consumption and high reliability make it a good choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference