JAN1N6169US Allicdata Electronics

JAN1N6169US Circuit Protection

Allicdata Part #:

1086-19780-ND

Manufacturer Part#:

JAN1N6169US

Price: $ 16.30
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 98.8V 187.74V SQ-MELF
More Detail: N/A
DataSheet: JAN1N6169US datasheetJAN1N6169US Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
100 +: $ 14.81450
Stock 1000Can Ship Immediately
$ 16.3
Specifications
Voltage - Clamping (Max) @ Ipp: 187.74V
Supplier Device Package: C, SQ-MELF
Package / Case: SQ-MELF, C
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 7.98A
Series: Military, MIL-PRF-19500/516
Voltage - Breakdown (Min): 117.33V
Voltage - Reverse Standoff (Typ): 98.8V
Bidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS (Transient Voltage Suppression) Diodes are constructed device that provides short-term over-voltage protection and are usually used to safeguard sensitive electronic systems. The JAN1N6169US is one of these devices and is specifically designed to protect low voltage CMOS integrated circuits. To understand its application field and principal of action, it is important to understand how it works.

Working Principle

Typically, the JAN1N6169US TVS diode works through a two-step process. First, it provides capacitance to the circuit. This capacitance increases with the voltage, providing a buffer that prevents excessive voltage from passing through the diode. When the voltage reaches a certain point, the diode switches to a breakdown mode. This causes an avalanche breakdown of the diode, allowing it to absorb large amounts of current and prevent it from reaching the system.

The JAN1N6169US diode is specifically designed to handle low voltage pulses and ESD (Electrostatic Discharge) transients. It is constructed in an ultra-protective 8-pin SOP (Small Outline Package) which is small and light enough to fit into most circuits. The diode features a silicon avalanche breakdown technology and is tested to a wide range of pulse widths making it extremely reliable.

Application Field

A key advantage of the JAN1N6169US is its ESD protection capability. It has been tested to provide up to 15KV of static protection, which is an outstanding level of protection. This makes it ideal for applications where the circuit must be able to withstand high levels of ESD, such as consumer electronics and medical equipment. It also provides reliable protection against overvoltage transients, making it suitable for use in public networks, telecoms systems, and automotive electronics.

The JAN1N6169US TVS diode is also designed for low power applications. It can operate at input voltage levels as low as 5V and draws less than 10mW of power. This makes it ideal for use in low-power devices such as handheld instruments, laptops, and batteries.

Overall, the JAN1N6169US TVS diode is an ideal solution for protecting low voltage CMOS integrated circuits from over-voltage pulse transients and ESD. It is small, light, and reliable and can be used in a wide range of applications from consumer electronics and medical equipment to telecoms systems and automotive electronics.

The specific data is subject to PDF, and the above content is for reference

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