| Allicdata Part #: | 1086-18590-ND |
| Manufacturer Part#: |
JAN1N4970D |
| Price: | $ 12.80 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | DIODE ZENER 33V 5W AXIAL |
| More Detail: | Zener Diode 33V 5W ±1% Through Hole E, Axial |
| DataSheet: | JAN1N4970D Datasheet/PDF |
| Quantity: | 1000 |
| 100 +: | $ 11.51600 |
| Series: | Military, MIL-PRF-19500/356 |
| Packaging: | Bulk |
| Part Status: | Active |
| Voltage - Zener (Nom) (Vz): | 33V |
| Tolerance: | ±1% |
| Power - Max: | 5W |
| Impedance (Max) (Zzt): | 10 Ohms |
| Current - Reverse Leakage @ Vr: | 2µA @ 25.1V |
| Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 1A |
| Operating Temperature: | -65°C ~ 175°C |
| Mounting Type: | Through Hole |
| Package / Case: | E, Axial |
| Supplier Device Package: | E, Axial |
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The JAN1N4970D is a zener diode device produced by Microsemi that offers low leakage, high temperature stability and low noise performance for electronic circuit applications. It is a single zener diode device, which means it has two terminals. One of these terminals is the anode and the other is the cathode.
Application Field
Zener diodes have a wide range of applications in electronics circuits. Commonly, they are used as voltage regulators, in which they are used to provide a constant DC voltage even if the input changes, or voltage protection, in which they are used to provide a protection limit to voltage spikes. They can also be used in combining two DC voltages.
The JAN1N4970D has been designed to be used in applications that require higher regulation accuracy and low noise performance, such as in audio amplifiers and for signal conditioning. In such applications, the noise and leakages of the zener device must be minimized, which the JAN1N4970D achieves due to its superior resistance to temperature and low-noise characteristics.
Working Principle
The working principle of a zener diode is based on the PN junction and avalanche breakdown effect. A PN junction is a diode that consists of a semi-conductor material (in this case, of Germanium) with a negatively and a positively doped region. As the name suggests, the negatively doped region has an excess of electrons whereas the positively doped region has an exess of holes. When biased, the electrons on the N-region move towards the P-region, which causes the depletion region on the PN-junction. When a forward bias exceeds the breakdown voltage of the diode, current flows in the diode. This is known as the avalanche effect. In the zener diode, this effect is utilized to produce a more precise voltage regulation.
The JAN1N4970D can provide a wide range of voltages from 1.8V to 22V with a maximum leakage current of 400nA. It is capable of withstanding operation temperatures from -65°C to +175°C. It is designed with a cathode mark to indicate which terminal is the cathode.
Conclusion
The JAN1N4970D is a single zener diode device produced by Microsemi that offers low leakage, high temperature stability and low noise performance. It is designed for applications that require precise voltage regulation, such as in audio amplifiers and signal conditioning. The working principle of the device is based on the PN junction and avalanche breakdown effect. The device is capable of providing a wide range of voltages from 1.8V to 22V with a maximum leakage current of 400nA. It is designed with a cathode mark to indicate which terminal is the cathode.
The specific data is subject to PDF, and the above content is for reference
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JAN1N4970D Datasheet/PDF