JANTX2N3421 Allicdata Electronics
Allicdata Part #:

1088-1008-ND

Manufacturer Part#:

JANTX2N3421

Price: $ 22.67
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS NPN 80V 3A TO-5
More Detail: Bipolar (BJT) Transistor NPN 80V 3A 1W Through Ho...
DataSheet: JANTX2N3421 datasheetJANTX2N3421 Datasheet/PDF
Quantity: 960
1 +: $ 20.60730
10 +: $ 19.05940
25 +: $ 17.51400
100 +: $ 16.27770
Stock 960Can Ship Immediately
$ 22.67
Specifications
Series: Military, MIL-PRF-19500/393
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 5µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V
Power - Max: 1W
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5
Description

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A transistor is an electronic component that is used to amplify or switch electronic signals and electrical power. Transistors are classified as bipolar (BJT) or field-effect transistors (FET) and there are two types of bipolar transistors: single and double. The JANTX2N3421 is an example of a single transistor.

The JANTX2N3421 is a silicon NPN transistor available in a TO-247 plastic package used mainly in low power, high speed switching and amplifier applications. It is a medium-power transistor ideal for driving relays, motors, small lamps, and other kinds of loads. Its low saturation voltage allows it to be used in switching applications to minimize power dissipation or heat generation.

The JANTX2N3421 consists of three terminals - the collector, the base, and the emitter. It is actually a three-layer semiconductor device, with each layer consisting of p-type and n-type semiconductor material. The collector terminal is connected to the n-type material, the base to the p-type material, and the emitter to the n-type material. The flow of current is controlled by the base-emitter voltage and base current. When the base-emitter voltage is increased, more electrons are freed from the base and therefore more current flows from the collector to the emitter. Conversely, when the base-emitter voltage is decreased, fewer electrons are freed from the base and less current flows from the collector to the emitter.

The main application of the JANTX2N3421 is in low frequency and low power switching. It is designed to be used in switches and drivers that require very low on-resistance and fast switching. It is also suitable for use in switching power supplies, motor drivers, inverters, and uninterruptible power supplies (UPS). Additionally, it can be used in amplifier circuits to increase the current gain or reduce the amount of noise.

The main principle of operation of the JANTX2N3421 is the same as that of any other bipolar transistor. The current flow from the collector to the emitter is controlled by the base-emitter voltage and base current. When the base-emitter voltage is increased, more electrons are freed from the base, and therefore more current flows from the collector to the emitter. Conversely, when the base-emitter voltage is decreased, fewer electrons are freed from the base, and less current flows from the collector to the emitter.

In summary, the JANTX2N3421 is a silicon NPN transistor available in a TO-247 plastic package used mainly in low power, high speed switching and amplifier applications. It is mainly used in low frequency, low power switching applications and can also be used in amplifier circuits to increase the current gain or reduce the amount of noise. The current flow from the collector to the emitter is controlled by the base-emitter voltage and base current, and the principle of operation is the same as that of any other bipolar transistor.

The specific data is subject to PDF, and the above content is for reference

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