Allicdata Part #: | 1086-20889-ND |
Manufacturer Part#: |
JANTXV2N3636UB |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS PNP 175V 1A |
More Detail: | Bipolar (BJT) Transistor PNP 175V 1A 1.5W Surface... |
DataSheet: | JANTXV2N3636UB Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Military, MIL-PRF-19500/357 |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 175V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 10µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 50mA, 10V |
Power - Max: | 1.5W |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 3-SMD, No Lead |
Supplier Device Package: | 3-SMD |
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Bipolar Junction Transistors (BJT) are one of the most commonly known and widely used transistors, and the JANTXV2N3636UB is an example of one from this family. This semiconductor device is an NPN type, which means it is constructed with an emitter, base, and collector. It is a three-terminal device that works as a current-controlled switch, with two input terminals (base and emitter) and one output terminal (collector). It is commonly used for amplifying or switching signals, or for providing voltage regulation, when incorporated into a circuit.
The JANTXV2N3636UB has an extensive application field in consumer electronics, signal amplifying circuits, and power switching, as it is capable of outputting a great amount of current. Additionally, it can also be used in a variety of other applications in industrial and automotive equipment, including signal conditioners, H-bridge circuits, and high voltage switching.
Apart from this wide range of applications, the JANTXV2N3636UB also features outstanding features, such as a high-breakdown voltage of 180V, its relatively high resistance, and its intrinsic capability of transferring linearity signals. All of these characteristics make it an ideal transistor for its particular applications.
The working principle of the JANTXV2N3636UB can be understood through two main actions: firstly, when a small current is applied to the base of the transistor, it produces amplification of the current at its collector. This is the most known functioning of transistors. Secondly, when in the active region, a small voltage difference between the base and emitter can result in a certain amount of current in the collector of the transistor. This is known as current gain and it is another important part of the working principles of a transistor. Both of these combined result in the primary working principle of any transistor, namely amplification and switch.
In conclusion, the JANTXV2N3636UB is an excellent example of the properties and capabilities of the three-terminal BJT family, as well as the general application of transistors in electrical circuits. This type of transistor is ideal for a range of applications due to its robust construction and performance. Additionally, its working principles are relatively easy to understand and can be used to understand the workings of other types of transistors. With its broad application field and working principles, the JANTXV2N3636UB is a great choice in its category of transistors.
The specific data is subject to PDF, and the above content is for reference
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