| Allicdata Part #: | 1086-16219-ND |
| Manufacturer Part#: |
JANTX2N708 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TRANS NPN 15V |
| More Detail: | Bipolar (BJT) Transistor NPN 15V 360mW Through H... |
| DataSheet: | JANTX2N708 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | Military, MIL-PRF-19500/312 |
| Packaging: | Bulk |
| Part Status: | Active |
| Transistor Type: | NPN |
| Voltage - Collector Emitter Breakdown (Max): | 15V |
| Vce Saturation (Max) @ Ib, Ic: | 400mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max): | 25nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 10mA, 1V |
| Power - Max: | 360mW |
| Frequency - Transition: | -- |
| Operating Temperature: | -65°C ~ 200°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-206AA, TO-18-3 Metal Can |
| Supplier Device Package: | TO-18 (TO-206AA) |
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The JANTX2N708 is a type of bipolar junction transistor, commonly referred to as a BJT. The device is a single transistor and is a PNP type. It is used in many different types of applications, ranging from audio circuitry to high-frequency switch components. The device is also an excellent choice for complex switching applications, due to its fast switching speed and low power dissipation.
The JANTX2N708 contains two junctions, comprising of two p-doped and two n-doped materials. In this type of transistor, the two p-doped junctions are connected together, and the two n-doping junctions are connected together, which creates the three-terminal structure of bipolar transistors. The terminals are the collector, base and emitter,denoted by C, B and E respectively.
The working principle of the JANTX2N708 is based on the movement of electrons and holes. Electrons are negatively charged particles that move from the emitter to the collector, while holes are positively charged particles that move in the opposite direction. When voltage is applied to the base, it controls the flow of electrons and holes between the emitter and collector. If a forward bias is applied to the base-emitter junction, electrons and holes are allowed to pass between the emitter and collector. This causes current to flow between the collector and emitter, and the transistor is said to be ‘on’. If a reverse bias is applied to the base-emitter junction, electrons and holes are blocked from passing between the emitter and collector, and the transistor is said to be ‘off’. This is how the JANTX2N708 is used to control the flow of current.
The JANTX2N708 can be used for various applications, including audio circuitry, high-frequency switching applications, and complex switching components. In audio circuitry, the device is used to control the gain of audio signals by controlling the flow of electrons and holes between the emitter and collector. In high-frequency switching applications, the device is used to control and switch signals in the radio frequency and microwave frequency ranges. In complex switching applications, the fast switching speed and low power dissipationfeatures of the JANTX2N708 make it a great choice.
The JANTX2N708 is a versatile bipolar transistor that is suitable for a wide range of applications. It is capable of operating at high frequencies and has a fast switching speed, making it an excellent choice for complex switching applications. It is also capable of operating at low power levels, making it an efficient device. Furthermore, the JANTX2N708 can be used in audio circuitry and high-frequency switching applications, making it a great choice for designers who are looking for a versatile and reliable device.
The specific data is subject to PDF, and the above content is for reference
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JANTX2N708 Datasheet/PDF