JANTXV2N2857UB Allicdata Electronics
Allicdata Part #:

1086-20741-ND

Manufacturer Part#:

JANTXV2N2857UB

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS NPN 15V 0.04A
More Detail: RF Transistor NPN 15V 40mA 200mW Surface Mount UB
DataSheet: JANTXV2N2857UB datasheetJANTXV2N2857UB Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: --
Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
Gain: 21dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB
Description

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The JANTXV2N2857UB is a kind of transistor specifically designed for RF (radio frequency) applications. It is a bipolar junction transistor, or BJT which is a type of electronic device commonly used in nearly all electronic circuits.

As the name implies, BJTs operate on the basis of the junction between two types of semiconductor material, N-type and P-type. N-type semiconductors, made up of silicon and given text letters such as N-type, are an electrical conductor and can be used to let electricity flow. P-type semiconductors made up of an electronic donor and acceptor atom, act like a gate, to let or stop the flow of electric current.

When two semiconductors with N-type and P-type characteristics are placed together in a BJT structure, the application of a base current from the circuit across the junction creates a depletion layer that essentially prevents electricity from flowing between the two semiconductors. The effect of this depletion layer can then be used to control and regulate the current flowing through the BJT. When the base current is increased to a threshold level, the depletion layer is eliminated and the current can freely flow from the collector to the emitter.

The JANTXV2N2857UB is a low-frequency BJT, meaning that it is designed to operate in a frequency range between 50 kHz and 220MHz. It is a voltage-controlled device, meaning that the amplification it provides is controlled by the voltage applied to the base terminal. It has a maximum power output of 250 mW and a minimum collector-emitter withstand voltage of 1.6 V. The JANTXV2N2857UB also features high stability, wide dynamic range and low distortion, making it a great choice for RF applications.

JANTXV2N2857UB transistors can be used in a variety of RF applications, including amplifiers, radios, receivers and transmitters. They are particularly well suited to applications that require high gain, low output impedance and high power efficiency. They are also ideal for applications operating in high frequencies, where other transistor types may not be suitable.

The JANTXV2N2857UB is a popular option for many RF applications because of its versatile design and high performance. It is easy to assemble, and can be soldered onto a printed circuit board. Additionally, it is highly reliable and cost-effective solution that provides efficient operation at high frequencies.

Overall, the JANTXV2N2857UB is a great choice for applications that require high performance, high power efficiency and reliable operation at high frequencies. It is a versatile device that can be used in a wide range of applications, including amplifiers, radios, receivers and transmitters. Because of its low output impedance, high gain, and low distortion, it is an ideal solution for many RF applications.

The specific data is subject to PDF, and the above content is for reference

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