JANTX2N7225U Allicdata Electronics
Allicdata Part #:

JANTX2N7225U-ND

Manufacturer Part#:

JANTX2N7225U

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET N-CH
More Detail: N-Channel 200V 27.4A (Tc) 4W (Ta), 150W (Tc) Surfa...
DataSheet: JANTX2N7225U datasheetJANTX2N7225U Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-267AB
Supplier Device Package: TO-267AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
FET Feature: --
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Series: Military, MIL-PRF-19500/592
Rds On (Max) @ Id, Vgs: 105 mOhm @ 27.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 27.4A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk 
Description

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The JANTX2N7225U is a power MOSFET developed by JANTX to provide a high performance solution to the needs of a wide range of electrical application.

This type of MOSFET is designed to be a single, high power field-effect transistor used in a wide range of applications, including power management, power conversion, switching power supplies, and system communications.

The JANTX2N7225U MOSFET is a single, N-channel enhancement-mode device that operates very efficiently at a high level of power. Its structure uses high-current channel devices to provide high-speed switching, with low voltage drop and excellent thermal management. The device also features an integrated gate driver that simplifies the MOSFET’s design.

In order to understand the application fields of the JANTX2N7225U, it is important to understand its working principle. The working principle of the MOSFET is based on the principle of charge-effect transistor, where the current flow is controlled by the amount of charge that flows through its gate. This is achieved by modifying the transistor’s gate voltage, or gate-source voltage, which is then split into two components.

The first component operates as a drain-source voltage, and the second component is a measure of the intrinsic speed of the transistor. This is known as the gate-source speed. It is important to note that the gate-source speed is inversely proportional to the applied voltage and current. The higher the voltage and current, the lower the gate-source speed.

The JANTX2N7225U is used in many different application fields, such as motor control, power supplies, and power management. Additionally, this MOSFET can be used in areas as varied as process control and digital circuit design. With its high performance and wide application range, it is sure to have utility anywhere that power control is required.

The efficiency of the JANTX2N7225U makes it an ideal choice for applications that require a high level of power. With its high-speed switching capabilities and low voltage drop, it is capable of meeting today’s stringent power requirements. In addition, this MOSFET can be used to provide power to applications with a wide range of input power levels, from low voltage to high voltage and current applications.

The JANTX2N7225U is an example of how technology can be used to provide a high level of power solutions and efficient power management. The device’s ability to provide high current, low voltage drop, and high speed switching make it an ideal choice for a wide range of applications. Its integrated gate driver ensures that a single device can be used in various applications, allowing for easy and economical system design.

The specific data is subject to PDF, and the above content is for reference

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