| Allicdata Part #: | 1086-16008-ND |
| Manufacturer Part#: |
JANTXV1N6633US |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | DIODE ZENER 3.6V 5W D5B |
| More Detail: | Zener Diode 3.6V 5W ±5% Through Hole E, Axial |
| DataSheet: | JANTXV1N6633US Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | Military, MIL-PRF-19500/356 |
| Packaging: | Bulk |
| Part Status: | Active |
| Voltage - Zener (Nom) (Vz): | 3.6V |
| Tolerance: | ±5% |
| Power - Max: | 5W |
| Impedance (Max) (Zzt): | 2.5 Ohms |
| Current - Reverse Leakage @ Vr: | 250µA @ 1V |
| Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 1A |
| Operating Temperature: | -65°C ~ 175°C |
| Mounting Type: | Through Hole |
| Package / Case: | E, Axial |
| Supplier Device Package: | E, Axial |
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Diodes are among the simplest and most common electronic components. They are used for a wide range of applications, such as rectifying, switching, and voltage regulation. Zener diodes, in particular, are used in many applications, such as supervisory circuits, current regulation, and voltage regulation. The JANTXV1N6633US is a Zener diode typically used for low voltage and high voltage regulation applications.
The JANTXV1N6633US diode is a small, compact diode that is both high in performance and durable. It is fabricated using the N-type doping process, which produces a robust, reliable device. It has an epitaxial construction and an integrated junction guardring, designed to provide an improved electrical performance over discrete devices. It features a maximum reverse voltage rating of 56 volts (VR = 56V) and a forward voltage drop of 0.550 volts (VF = 0.550V). Additionally, it has a maximum reverse power dissipation of 1 watt (PD = 1W) and a forward current of 0.125 amps (IF = 0.125A).
The working principle of the JANTXV1N6633US is simple and straightforward. The diode is made up of two parts: a p-type region and an n-type region. When an electrical current is applied to the diode, it makes the n-type region more negative and the p-type region more positive. This creates a potential barrier at the junction of the two regions, known as a depletion region. This barrier prevents current from flowing freely, thus regulating the voltage. The higher the current, the greater the voltage drop across the diode. In the case of Zener diodes, the reverse leakage current is also regulated, as a Zener diode has a built-in breakdown voltage, or Zener voltage. Thus, when a voltage above the Zener voltage is applied to the diode, the barrier breaks down and current can flow in the opposite direction, allowing the diode to act as a voltage regulator.
The JANTXV1N6633US has a wide range of applications. It is designed to act as a voltage regulator in low voltage and high voltage applications. It can be used in circuits that require reliable and precise control of lead voltage and current, such as in radio frequency equipment and overvoltage protection circuits. It can also be used in switching supplies, power management systems, and monitoring circuits. Additionally, it can be used in circuits that require efficient transient suppression, such as in surge protection circuits.
In summary, the JANTXV1N6633US is a Zener diode with a wide range of applications. It is a robust and reliable device that is both high in performance and durable. It is designed for use in low voltage and high voltage applications, where it acts as a voltage regulator and surge protector. Additionally, it can be used in switching supplies, power management systems, and monitoring circuits. As such, it is an essential component in many electronic circuits.
The specific data is subject to PDF, and the above content is for reference
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JANTXV1N6633US Datasheet/PDF