KDZTR5.1B Discrete Semiconductor Products |
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Allicdata Part #: | KDZTR5.1BTR-ND |
Manufacturer Part#: |
KDZTR5.1B |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | DIODE ZENER 5.4V 1W PMDU |
More Detail: | Zener Diode 5.4V 1W ±6% Surface Mount PMDU |
DataSheet: | KDZTR5.1B Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
Voltage - Zener (Nom) (Vz): | 5.4V |
Tolerance: | ±6% |
Power - Max: | 1W |
Current - Reverse Leakage @ Vr: | 20µA @ 1V |
Operating Temperature: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | SOD-123F |
Supplier Device Package: | PMDU |
Base Part Number: | KDZ5V1 |
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Diodes – Zener – Single – KDZTR5.1B Application Field and Working Principle
KDZTR5.1B is a single Zener diode manufactured by ON Semiconductor Corporation. It has a low forward voltage drop that makes it suitable for voltage regulation applications. The diode also has a high breakdown voltage of 5.1V, making it ideal for applications such as limiting/clamping circuits. It is also used in reverse recovery applications and maintains stable characteristics with temperature changes.
The construction of a Zener diode is similar to a standard diode. However, it has an additional “short-circuit” path known as the Zener breakdown region. The diode is made up of two heavily doped PN-junction pieces of silicon encapsulated in a glass enclosure. This type of diode is important in regulating the voltage levels in circuits. On the other hand, a standard diode can act as a current limiter in circuits but it cannot regulate the voltage levels.
The working principle of the KDZTR5.1B is based on the Zener breakdown effect. When a reverse-biased voltage is applied, the electric field in the depletion layer increases till it reaches a point where the covalent bonds between the P-type and N-type materials break down. This breaking down of the bond is known as the Zener breakdown and results in current flow through the diode. This current flow is known as the breakdown current. The voltage at which the breakdown effect occurs is known as the Zener voltage.
The Zener voltage of the KDZTR5.1B is 5.1V, which is ideal for high voltage regulation applications. The diode also supports a steady state power dissipation of up to 500mW for continuous operation. This makes it suitable for applications that require high-volume voltage regulation.
The KDZTR5.1B diode also has a low forward voltage drop, which makes it ideal for applications that require maximum efficiency. This property is useful for applications such as voltage regulation or reverse-recovery. The diode also maintains stable characteristics even with temperature changes, making it suitable for applications such as switching supplies.
The KDZTR5.1B diode has a wide range of applications, making it an ideal choice for power applications where efficient, high-volume voltage regulation is required. This diode is also suitable for reverse-recovery applications where steady state current and power dissipation is needed. It is also used in switching supplies due to its temperature stability and low forward voltage drop.
In conclusion, the KDZTR5.1B Zener diode is a single, low-voltage, high-quality diode manufactured by ON Semiconductor Corporation. The diode is ideal for applications requiring efficient high-volume voltage regulation and reverse-recovery. The diode offers a steady state power dissipation of up to 500mW and a low forward voltage drop making it a suitable choice for power applications. The Zener voltage of 5.1V makes it an ideal for high voltage regulation applications. The diode also maintains stable characteristics even with temperature changes, making it a suitable choice for switching supplies.
The specific data is subject to PDF, and the above content is for reference
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