KSA642CYTA Allicdata Electronics
Allicdata Part #:

KSA642CYTA-ND

Manufacturer Part#:

KSA642CYTA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 25V 0.3A TO-92
More Detail: Bipolar (BJT) Transistor PNP 25V 300mA 400mW Thro...
DataSheet: KSA642CYTA datasheetKSA642CYTA Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 1V
Power - Max: 400mW
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: KSA642
Description

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The KSA642CYTA Transistor is a single, bipolar junction transistor (BJT) that has a wide range of applications in the electronics industry. It is capable of operating in both linear and switching modes and is suitable for use as a switching or biasing device. It has low capacitance and high current gain capability making it ideal for use in high frequency applications.

The KSA642CYTA Transistor is a three terminal transistor device comprising of the emitter terminal, the collector terminal and the base terminal. The emitter is connected to the emitter which is typically the negative power source. The base is connected to the control terminal which is typically the positive power source and the collector is typically connected to the load. In the off state the base-collector junction is reverse biased and no current flows. When a signal is applied between the base and collector, a small current will flow between the emitter and the collector, and then in turn, the transistor will be “turned on” and allow a larger current to flow between the Collector and the Emitter.

The KSA642CYTA Transistor has a maximum collector to emitter voltage of 600V and a collector current of 150mA. Its power dissipation capability is 800mW and its maximum junction temperature is 150° C. Its gain is moderately high depending on the collector current and temperature. It is capable of operating at frequencies up to 25MHz and is suitable for use in both switching and linear applications.

The KSA642CYTA Transistor is capable of being used as a switch, amplifier, voltage regulator or oscillator. As a switch it can be used to turn a larger load on and off. As an amplifier it can be used to increase the power of a signal, either acoustically or electrically. As a voltage regulator it can be used to maintain a steady voltage level across the transistor and its load. And as an oscillator, it can be used to generate an oscillating signal that can be used in communications and control systems. As such, it has a wide range of applications in many industries.

The KSA642CYTA Transistor is available in small surface mount packages making them ideal for high density circuit boards used in small, space saving electronics. They can be soldered by hand, or by machine depending on the production scale and complexity of the circuit. They are also highly heat resistant and are well suited for thermal cycling applications.

In conclusion, the KSA642CYTA Transistor is a single, bipolar junction transistor device that is suitable for use in linear and switching applications. It is capable of handling large currents and voltages and has a wide range of applications in many industries. It is available in a small surface mount package and can be soldered either manually or by machine. In addition, it is highly heat resistant, making it suitable for thermal cycling applications.

The specific data is subject to PDF, and the above content is for reference

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