Allicdata Part #: | KSA642YTA-ND |
Manufacturer Part#: |
KSA642YTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 25V 0.3A TO-92 |
More Detail: | Bipolar (BJT) Transistor PNP 25V 300mA 400mW Thro... |
DataSheet: | KSA642YTA Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 300mA |
Voltage - Collector Emitter Breakdown (Max): | 25V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 30mA, 300mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 50mA, 1V |
Power - Max: | 400mW |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | KSA642 |
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The KSA642YTA is a bipolar junction transistor (BJT) typically used in amplifier applications. It is a single device, meaning it features one base, one emitter, and one collector area. Features of this device include a maximum frequency of 100MHz and a maximum collector current of 0.2A. It can operate with a supply voltage of up to 12V.
The KSA642YTA is a PNP transistor, meaning that it is an N-type material sandwiched between two P-type materials. The N-type material is the base, which controls the flow of electrons from the emitter to the collector. The P-type materials are the emitter and the collector. When a small voltage is applied to the base of the device, the PN junction creates a depletion region that blocks the electrons from the emitter to the collector. This stops the current from flowing and lowers the output voltage. However, when a larger voltage is applied, the depletion region decreases allowing more electrons to flow from the emitter to the collector, thus increasing the current and raising the output voltage.
The KSA642YTA is mainly used in amplifier applications because of its high gain characteristics and its ability to switch fast. Its high gain allows it to amplify a small input signal to a much larger output signal, greatly improving the signal-to-noise ratio. It is also capable of switching fast due to its low capacitance and high frequency capabilities, making it an excellent choice for applications that require quick, reliable responses.
The KSA642YTA can also be used in switching applications such as motor controllers, light dimmers, and pulse modulation. In these applications, it can be used to create a variable DC current that can be used to control the speed or position of a motor, the brightness of a light, or the rate at which a pulse modulation oscillator produces outputs. The KSA642YTA can also be used to control the output of an analog-to-digital converter when used in the high-side switching configuration.
Additionally, the KSA642YTA is often used in communication circuits for switching applications such as spread spectrum radio, frequency hopping radio, and spread spectrum signaling. It is also used to drive high-frequency switching transistors for use in applications such as in-building low power radio and Wi-Fi. Other applications for the KSA642YTA are in voltage-controlled oscillators and various other radio frequency (RF) circuits.
In summary, the KSA642YTA is a bipolar junction transistor (BJT) and is a single device. It has several advantageous characteristics that make it suitable for use in amplifier and switching applications, as well as in communication circuits. The KSA642YTA has a maximum frequency of 100MHz and a maximum collector current of 0.2A and can operate with a supply voltage of up to 12V. It is an excellent device for applications that require quick, reliable responses and is capable of providing highly efficient amplifications.
The specific data is subject to PDF, and the above content is for reference
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