KSA643GBU

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	20V
Vce Saturation (Max) @ Ib, Ic:	400mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	200 @ 100mA, 1V
Power - Max:	500mW
Frequency - Transition:	--
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package:	TO-92-3
Base Part Number:	KSA643

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KSA643GBU is an NPN single diffused silicon planar epitaxial transistor manufactured by KEC, a leading semiconductor company in South Korea. It is suitable for general-purpose switching and amplification applications. The device operates with a complementary pair of 2SC372, 2SC5236 and 2SC7634.KSA643GBU is designed to provide superior performance and low power consumption. It can operate either as a single diffused transistor or as a complementary pair of NPN transistors in the same package, allowing for better control of electrical performance. The device has a maximum collector current of 0.125A and a maximum collector-emitter voltage of 25V. It also has a maximum power dissipation of 3W and a collector-emitter saturation voltage of 0.1V.The device is designed for use in a variety of applications, including a variety of basic logic circuits and amplifying circuits. It can also be used as a buffer amplifier in analog circuits. Additionally, the device can be used in power control circuits, analog signal processing circuits and clock circuits.The working principle of the KSA643GBU single diffused silicon planar epitaxial transistor involves the injection of minority carriers at the base-collector junction. The majority carriers at the base-collector junction are removed by the negative potential applied to the base terminal thus reducing the effective base-collector insulation. The current amplification factor of the device is proportional to the current flow through the base-collector junction and is determined by the ratio of the collector current to the base current.The device also utilizes \'mesa hats\' technology for improved thermal performance. The \'mesa hats\' are designed to dissipate the heat generated by the device, allowing for more efficient operation.The KSA643GBU single diffused silicon planar epitaxial transistor is designed with a wide range of features to help improve its performance. These features include a wide operating temperature range of -55°C to +150°C, a low collector-to-emitter saturation voltage of 0.1V, and a low stand-by current of 0.1mA. The device also features a high gain-bandwidth product of 8.5GHz and is housed in an 8-pin small outline package.In conclusion, the KSA643GBU single diffused silicon planar epitaxial transistor is a device designed to be used in a variety of applications. It features excellent switching and amplification performance at a low power consumption, making it an ideal choice for many applications. Additionally, its \'mesa hats\' design allows for superior thermal performance and its wide range of features helps to further improve its performance.

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